MC79076R2

Freescale Semiconductor Technical Data Document Number: 79076 Rev. 3.0, 3/2007 Electronic Ignition Control Circuit The 79076, in conjunction with an appropriate Freescale Power Darlington Transistor, provides an economical solution for automotive ignition applications. The 79076 offers optimum performance by providing closed loop operation of the Power Darlington in controlling the ignition coil current. Features • • • • • • Hall or Variable Reluctance Sensor Input Ignition Coil Voltage Internally Limited to 375 V Coil Current Limiting to 7.5 A Output On–Time (Dwell) Control Dwell Feedback Control to Sense Coil Variation Pb-Free Packaging Designated by Suffix Code EG 79076 ELECTRONIC IGNITION CONTROL CIRCUIT DW SUFFIX EG (PB-FREE) SUFFIX 98ASB42567B 16-PIN SOIC ORDERING INFORMATION Device MC79076DW/R2 MCZ79076EG/R2 Temperature Range (TA) -30°C to 125°C Package 16 SOIC 79076 POWER GROUND RPM DETECT DWELL CONTROL BYPASS REFERENCE EST BIAS VOLTAGE VCC ADVANCE SIGNAL GROUND REFERENCE/DWELL CURRENT SENSE DWELL Figure 1. 79076 Simplified Application Diagram Freescale Semiconductor, Inc. reserves the right to change the detail specifications, as may be required, to permit improvements in the design of its products. © Freescale Semiconductor, Inc., 2007. All rights reserved. INTERNAL BLOCK DIAGRAM INTERNAL BLOCK DIAGRAM POWER GROUND CURRENT SENSE DWELL Output Logic and Control DWELL CONTROL RPM DETECT BYPASS REFERENCE EST BIAS VOLTAGE ADVANCE REFERENCE/DWELL VCC SIGNAL GROUND Reference Generator Figure 2. 79076 Simplified Internal Block Diagram 79076 2 Analog Integrated Circuit Device Data Freescale Semiconductor PIN CONNECTIONS PIN CONNECTIONS Power Ground Current Sense Dwell VCC Signal Ground Reference/Dwell Advance Bias Voltage 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 NC NC NC Dwell Control RPM Detect Bypass Reference EST Figure 3. 79076 Pin Connections 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 3 ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 1. Maximum Ratings All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings ELECTRICAL RATINGS Supply Voltage Steady-State Transient Conditions (1) Supply Current Transient Conditions (2) Transient Negative Current (tT = 60ms) Transient Negative Current (tT = 1ms) Input Voltage (3) Ref/Dwell, Advance EST, Bypass Ref/Dwell Input Current Dwell ON Sink Current Output ON (Operating) Output ON (t = 10ms) Dwell OFF Voltage (4) Symbol Value Unit V VCC(SUS) VCC(PK) IT 1.0 -100 -1.3 VIN1 VIN2 IIN1 ID 0.3 0.8 VD(OFF) 5.0 V -5.0 to 30 -5.0 to 24 -20 mA A A mA A V 36 50 THERMAL RATINGS Storage Temperature Operating Ambient Temperature THERMAL RESISTANCE Operating Junction Temperature Thermal Resistance (Junction-to-Ambient) - SO8 Peak Package Reflow Temperature During Reflow (5), (6) TJ ØJ-A TPPRT -30 to 150 80 Note 6 °C °C/W °C TSTG TA -65 to 150 -30 to 125 °C °C Notes 1. Survivability of device with transient voltage applied to VCC pin for a duration not to exceed 10ms. 2. 3. 4. 5. 6. Survivability of device with overvoltage applied to VCC pin producing the current for a duration not to exceed 10ms. Exceeding this voltage range on the function pin may cause permanent damage to the device. A zener diode is incorporated across collector to emitter of the output NPN device to prevent voltage overdrive of the external Darlington switch transistor. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics. 79076 4 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic INPUTS Advance Input Resistance (VCC = 16 V, Ref/Dwell = 1.0 V, Advance = 1.0 mA, EST = Bypass = 0 V) Advance Voltage (7) VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V Advance Threshold Voltage (7) (VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V,) Dwell = Reference = RPM Detect = open, Dwell Control = sinking 10 µA) Increasing Decreasing Hysteresis Bypass Input Resistance (VCC = 16 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V) Bypass Voltage (VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0V) Bypass Threshold Voltage (8) (Ref/Dwell = Advance = 1.0 V, EST = 3.0 V) Increasing Decreasing Hysteresis Current Sense Threshold Voltage (9) Symbol Min Typ Max Unit R(A) 15 VTH(A) 0.05 0.1 18 25 kΩ V V VTH+(A) VTH-(A) VHYS(A) R(BP) VB + 0.103 VB + 0.114 VB + 0.130 VB + 0.045 VB + 0.068 0.018 6.0 0.045 9.2 16 kΩ V(BP) - 0.065 0.1 V V VTH+(BP) VTH-(BP) VHYS(BP) VTH(CS) 90 R(EST) 7.0 V(EST) 0.07 10.3 18 0.1 V 105 121 kΩ VB + 1.6 VB + 0.9 0.65 VB + 0.188 VB + 0.103 0.86 VB + 2.1 mV (VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 3.0 V) EST Input Resistance (VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V) EST Input Voltage (EST Mode) (VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V) Notes 7. Advance Threshold Voltage is the positive (or negative) going voltage on Advance necessary cause the Dwell Control voltage to positive (or negative) going transition 2.0 V respectively. It is expressed as VTH±(A) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. 8. Bypass Threshold Voltage is the positive (or negative) going voltage on Bypass necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(BP) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. 9. Increasing voltage on Current Sense which when attained will cause Dwell to transition low to 1.5 V with a 10 mA load. 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 5 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic EST Threshold Voltage (10) (Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V) Increasing Decreasing Hysteresis Ref/Dwell Current (11) Symbol Min Typ Max Unit V VTH+(EST) VTH-(EST) VHYS(EST) I(R/D) 1.65 0.8 0.79 1.86 0.89 0.97 2.0 µA (VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V) Ref/Dwell Voltage = 1.0 V Ref/Dwell Voltage = 20 V Ref/Dwell Clamp Voltage (VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V) IR/D = 100µA (Sourcing) IR/D = 1.0mA (Sourcing) Ref/Dwell Threshold (Bypass Mode) (12) (Advance = 1.0 V, EST = Bypass = 0 V, Reference = sinking 10 µA) Increasing Decreasing Hysteresis Ref/Dwell Threshold (EST Mode) (12) -12 -1.0 V(R/D)CL -0.01 -0.62 -1.38 0.02 1.0 5.0 V -0.04 -0.54 0.2 V VTH+(R/D)BP VTH-(R/D)BP VHYS(R/D)BP VB + 0.09 VB + 0.018 0.055 VB + 0.106 VB + 0.116 VB + 0.03 0.076 V (Advance = 1.0 V, EST = 0 V, Bypass = 3.0 V, Reference = sinking 10 µA) Increasing Decreasing Hysteresis Ref/Dwell Threshold (No Pump) (13) (Advance = 1.0 V, EST = Bypass = 0 V, Dwell = sinking 10 mA) Increasing Decreasing Hysteresis VTH+(R/D)EST VTH-(R/D)EST VHYS(R/D)EST VB + 0.445 0.395 VB + 0.50 0.436 VB + 0.535 V VB + 0.038 VB + 0.062 VTH+(R/D)NP VTH-(R/D)NP VHYS(R/D)NP VB + 0.003 VB + 0.118 VB + 0.128 VB + 0.021 VB + 0.047 VB + 0.013 VB + 0.072 - Notes 10. EST Threshold Voltage is the positive (or negative) going voltage on EST necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(EST) and is in reference to ground. 11. 12. Ref/Dwell can either source or sink current; A minus sign denotes the Ref/Dwell is sourcing current. Ref/Dwell Threshold Voltage (Bypass Mode) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Reference voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. Ref/Dwell Threshold Voltage (No Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. Advance = 1.0 V providing no input assist or "No Pump" influence of Dwell signal; Reference open. 13. 79076 6 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Ref/Dwell Threshold (Max Pump) (14) (VCC = 16 V, Advance = 3.0 V, EST = Bypass = 0 V, Dwell sinking 10 mA, Dwell Control = open) Increasing Decreasing Hysteresis OUTPUTS Bias Resistance to Ground Dwell = VCC = Ref/Dwell = Reference = Dwell Control = open, Advance = 1.0 V, EST = Bypass = 0 V Bias Voltage (Bypass Mode) Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V Bias Voltage Regulation (Bypass Mode) Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V Bias Voltage (EST Mode) VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0 V, Bypass = 3.0 V Dwell Saturation Voltage VCC = 4.0 V, ID = 40 mA, Ref/Dwell = Advance =3.0 V, EST = Bypass = 0 V VCC = 16 V, ID = 160 mA, Ref/Dwell = Advance =3.0 V, EST = Bypass = 0 V VCC = 24 V, ID = 240 mA, Ref/Dwell = Advance =1.0 V, EST = Bypass = 3.0 V VCC = 36 V, ID = 360 mA, Ref/Dwell = Advance =1.0 V, EST = Bypass = 3.0 V Dwell Reverse Clamp Voltage (15) Dwell Leakage Current (16) Symbol Min Typ Max Unit V VTH+(R/D)MP VTH-(R/D)MP VHYS(R/D)MP VB + 0.175 VB + 0.474 VB + 0.025 VB + 0.048 VB + 0.80 - VB + 0.115 VB + 0.425 VB + 0.735 R(B) 0.55 V(B)BP 2.25 V(B)BP V(B)EST 1.9 V(D)SAT V(D)REV I(D)KG V(R)LOW 0.13 0.22 0.044 50 -0.9 0.05 0.14 0.20 0.29 -0.98 0.1 0.24 0.35 0.5 -1.2 2.04 2.2 30 40 2.43 2.6 0.68 0.9 kΩ V mV V V V µA VCC = 16 V, Dwell = 5.0 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0, Bias Voltage = Reference = open Reference Low (17) IR = sinking 0.3 mA, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0V V Notes 14. Ref/Dwell Threshold Voltage (Max Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is the additional voltage necessary to attain the threshold. Advance = 3.0 V providing maximum input assist or Max Pump" influence of Dwell signal; Reference = Dwell Control = open. 15. All pins open except Pwr Gnd with Dwell sinking 200 mA. 16. Limit conditions with Dwell output NPN in the OFF condition. 17. Reference saturation voltage to ground with 0.3mA of current going into the Reference. 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 7 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Reference High/Un-Clamped (27) VCC = 4.0 V, IR = sourcing 100 mA, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V Reference High/Clamped (27) VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V IR = sourcing 10 µA IR = sourcing 1.0 mA CONTROLS Dwell Control Negative Clamp Voltage (27) VCC = 16 V, IDC = sourcing 100 µA, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V Dwell Control Positive Clamp Voltage (27) VCC = 16 V, IDC = sinking 100 µA, Ref/Dwell = 1.0 V, Advance = Open, EST = Bypass = 0 V Dwell Control Charge Current (27) VCC = 16 V, Ref/Dwell = 1.0 V, Advance = Dwell Control = 3.0 V, EST = Bypass = 0 V Dwell Control Discharge Current (27) VCC = 16 V, Current Sense = 0.5 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V Dwell Control Input Current (27) VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V, Dwell Control = 7.0 V RPM Detect Charge Current ON (27) VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V RPM Detect Current (27) VCC = 16 V, 1.0 V = Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V RPM Detect = 0.5 V RPM Detect = 1.5 V RPM Detect Clamp Voltage (27) Symbol V(R)HI/UNCL Min Typ Max Unit V 3.2 V(R)HI/CL 12 3.36 V 5.41 15.3 6.0 - V(DC)-CL 0.5 V(DC)+CL 8.0 I(DC)CHG 30 I(DC)DISCHG 18 I(DC)SINK I(RPM)CHG -4.0 I(RPM)LKG 04.0 -0.1 V(RPM)CL 2.4 2.5 2.7 0.55 0.01 1.0 0.1 0.54 1.0 1.1 2.5 33 48 47 58 8.2 8.4 0.7 0.8 V V µA µA µA mA µA V VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V, RPM Detect = sourcing 16 µA Notes 18. 19. 20. 21. 22. 23. 24. 25. 26. Dwell Control adjusts the reference voltage of Dwell Comparator. Dwell Control. sourcing 100 µA. Dwell Control sinking 100 µA. Dwell Control at 3.0 V; Internal Dwell Control transistor OFF. Dwell Control at 3.0 V; Internal Dwell Control transistor ON. Dwell Control at 7.0 V; Internal Dwell Control transistor OFF. Q53 and Q54 both ON; Measured with RPM Detect voltage at 0.5 V to reflect maximum source current capability. See Typical Applications on page 10 Q53 and Q54 both OFF; Measured with RPM Detect voltage at 0.5 V and 1.5 V to reflect maximum leakage current. Typical Applications on page 10 Q53 and Q54 both ON; RPM Detect sinking 16 µA. Typical Applications on page 10 79076 8 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 2. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic RPM Detect Threshold (27) VCC = 16 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V RPM Detect Charge Current VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V I(RPM)CHG -2.0 Symbol VTH-(RPM) 0.8 0.92 1.0 mA Min Typ Max Unit V Notes 27. Decreasing Threshold; RPM Detect voltage decreased from 0.6 V until Dwell voltage transitions low to 1.5 V with 10 mA load. 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 9 TYPICAL APPLICATIONS TYPICAL APPLICATIONS 79076 10 Analog Integrated Circuit Device Data Freescale Semiconductor PACKAGING PACKAGE DIMENSIONS PACKAGING PACKAGE DIMENSIONS For the most current package revision, visit www.freescale.com and perform a keyword search using the “98A” listed below. DW SUFFIX EG SUFFIX (PB-FREE) 16-PIN PLASTIC PACKAGE 98ASB42567B ISSUE F 79076 Analog Integrated Circuit Device Data Freescale Semiconductor 11 REVISION HISTORY REVISION HISTORY REVISION 3.0 DATE 3/2007 DESCRIPTION OF CHANGES • • • • Implemented Revision History page Converted to Freescale format Added MCZ79076EG/R2 to the Ordering Information Removed MCCF79076 and all corresponding references. 79076 12 Analog Integrated Circuit Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc., 2007. All rights reserved. 79076 Rev. 3.0 3/2007