MHVIC2115R2

Freescale Semiconductor Technical Data Document Number: MHVIC2115R2 Rev. 4, 8/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2115R2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover W - CDMA modulation formats. Final Application • Typical W - CDMA Performance: - 45 dBc ACPR, 2110 - 2170 MHz, VDD = 27 Volts, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA, Pout = 34 dBm, 3GPP Test Model 1, Measured in a 1.0 MHz BW @ 4 MHz offset, 64 DTCH Power Gain — 30 dB PAE = 16% Driver Application • Typical W - CDMA Performance: - 53 dBc ACPR, 2110 - 2170 MHz, VDD = 26 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz offset, 64 DTCH Power Gain — 34 dB • Gain Flatness = 0.3 dB from 2110 - 2170 MHz • P1dB = 15 Watts, Gain Flatness = 0.2 dB from 2110 - 2170 MHz • Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • Integrated ESD Protection • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ MHVIC2115R2 2170 MHz, 26 V, 23/34 dBm W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER ARCHIVE INFORMATION 16 1 CASE 978 - 03 PFP - 16 Replaced by MHVIC2115NR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. Value - 0.5, +65 - 0.5, +15 - 65 to +150 150 Unit Vdc Vdc °C °C N.C. VGS3 VGS2 VGS1 Quiescent Current Temperature Compensation VGS3 VGS2 VGS1 RFin RFin IC VDS3/RFout RFin VDS1 VDS2 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 N.C. VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout N.C. VDS1 VDS2 3 Stages IC (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 1. Block Diagram Figure 2. Pin Connections © Freescale Semiconductor, Inc., 2006. All rights reserved. MHVIC2115R2 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = +0.2 W CW) Output Application (Pout = +2.5 W CW) Stage 1, 26 Vdc, IDQ = 96 mA Stage 2, 26 Vdc, IDQ = 204 mA Stage 3, 26 Vdc, IDQ = 111 mA Stage 1, 27 Vdc, IDQ = 56 mA Stage 2, 27 Vdc, IDQ = 61 mA Stage 3, 27 Vdc, IDQ = 117 mA Symbol RθJC 3.5 Value Unit °C/W 2.7 Table 3. ESD Protection Characteristics Test Conditions Human Body Model Class 1 (Minimum) ARCHIVE INFORMATION Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 240 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit W - CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz Power Gain Gain Flatness Input Return Loss Group Delay Phase Linearity 1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio @ Pout = 23 dBm, 5 MHz Offset 1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio @ Pout = 28 dBm, 5 MHz Offset Gps GF IRL — — ACPR ACPR 31 — — — — — — 34 0.3 - 12 1.7 0.2 - 53 - 50 — 0.5 - 10 — — - 50 — dB dB dB ns ° dBc dBc W - CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA, Pout = 34 dBm, 2110 - 2170 MHz Power Gain Gain Flatness Input Return Loss Power Added Efficiency 1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio @ Pout = 34 dBm, 4 MHz Offset Gps GF IRL PAE ACPR — — — — — 30 0.2 - 12 16 - 45 — — — — — dB dB dB % dBc NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MHVIC2115R2 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Machine Model M1 (Minimum) 1 Vbias3 R3 Vbias2 R2 Vbias1 R1 RF INPUT 16 + C1 C2 3 C3 2 15 C15 14 + C5 4 13 C16 RF OUTPUT C9 + C14 C4 5 12 6 VD1 Quiescent Current Temperature Compensation 11 VD3 ARCHIVE INFORMATION C21 VD2 C8 C7 C6 8 9 C17 C18 C19 C20 + C13 + C12 C11 C10 C1, C5, C8, C12, C14, C19 C2, C3, C4, C7, C11, C18 C6, C10, C17 C9, C15, C16 1 mF SMT Tantalum Chip Capacitors 0.01 mF Chip Capacitors (0805C103K5RACTR) 6.8 pF Chip Capacitors, ACCU - P (AVX 08051J6R8BBT) 1.8 pF Chip Capacitors, ACCU - P (AVX 08051J1R8BBT) C13, C20, C21 330 mF Electrolytic Capacitors (MCR35V337M10X16) R1, R2, R3 1 kW Chip Resistors (0805) PCB Arlon, 0.020,, er = 2.55 Figure 3. MHVIC2115R2 Demo Board Schematic MHVIC2115R2 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION + + 7 10 + + Vbias1 R1 Vbias2 R2 Vbias3 R3 VGS C2 C14 C5 C1 MHVIC2115R2 Rev 1 C4 VG1 VG2 VG3 C3 C15 ARCHIVE INFORMATION C6 C16 C10 C7 C12 C8 C21 VDD1 C11 C13 VDD2 C17 C18 C19 C20 VDD3 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MHVIC2115R2 Demo Board Component Layout MHVIC2115R2 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION C9 TYPICAL CHARACTERISTICS 50 40 30 S21 (dB) 20 10 0 −10 VDD = 27 Vdc, Pout = 23 dBm CW S11 S21 0 −5 −10 DELAY, (nSEC) −15 −20 −25 −30 S11 (dB) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 2100 VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA −20 −35 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 f, FEQUENCY (MHz) TC = 85_C 25_C −30_C ARCHIVE INFORMATION f, FREQUENCY (MHz) Figure 5. Broadband Frequency Response Figure 6. Delay versus Frequency 40 39 G ps , POWER GAIN (dB) 38 37 36 35 34 33 32 31 30 2100 VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 2120 2130 2140 2150 2160 2170 2180 25_C 85_C TC = −30_C IRL, INPUT RETURN LOSS (dB) 20 15 TC = 85_C 25_C −30_C 10 5 VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 0 2100 2110 2120 2130 2140 2150 2160 2170 2180 f, FREQUENCY (MHz) f, FREQUENCY, (MHz) Figure 7. Power Gain versus Frequency Figure 8. Input Return Loss versus Frequency 40 39 38 G ps , POWER GAIN (dB) 37 36 35 34 33 32 31 30 20 VDD = 27 Vdc, f = 2140 MHz IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 25 30 35 40 45 70 65 TC = −30_C TC = 25_C S21 PHASE(_) 60 −30_C 55 50 45 40 20 85_C VDD = 27 Vdc, f = 2140 MHz IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 25 30 35 40 45 25_C 85_C Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 9. Power Gain versus Output Power Figure 10. S21 Phase versus Output Power MHVIC2115R2 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION 2110 2120 2130 2140 2150 2160 2170 2180 TYPICAL CHARACTERISTICS ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −40 −42 −44 −46 −48 −50 −52 −54 −56 −58 −60 15 17 19 21 23 25 27 29 2140 MHz 2170 MHz 2110 MHz IMR (dBc) VDD = 27 Vdc 3GPP Test Model 1 64 DPCH −40 −45 −50 −55 3rd Order −60 −65 5th Order 33 35 −70 2000 2050 2100 2150 122 mA 111 mA 100 mA VDD = 27 Vdc Pout = 23 dBm Two−Tone Avg. Tone Spacing = 100 kHz IDQ3 = 100 mA 122 mA ARCHIVE INFORMATION Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 11. W - CDMA ACPR versus Output Power Figure 12. Two - Tone IMR versus Frequency IMD, INTERMODULATION DISTORTION (dBc) −50 −52 −54 −56 −58 −60 −62 −64 −66 −68 −70 0 5 10 15 20 25 TONE SPACING (MHz) VDD = 27 Vdc, f = 2140 Pout = 23 dBm, Two−Tone Avg. 5th Order 3rd Order Vbias, FIXTURE BIAS VOLTAGE (V) 6.00 5.75 5.50 5.25 5.00 4.75 4.50 4.25 4.00 VBIAS1 VBIAS2 VDD = 27 Vdc R1 = R2 = R3 = 1000 Ohms VBIAS3 3.75 3.50 3.25 3.00 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 T, TEMPERATURE (C) Figure 13. Two - Tone Broadband Performance Figure 14. Fixture Bias versus Temperature 4.20 4.10 Vgs, IC GATE BIAS VOLTAGE (V) 4.00 3.90 3.80 3.70 3.60 3.50 3.40 3.30 3.20 −40 −30 −20 −10 0 10 20 30 40 Igs3 Vgs3 VDD = 27 Vdc R1 = R2 = R3 = 1000 Ohms Vgs1 & Vgs2 Igs1 & Igs2 2.00 1.80 Igs, GATE BIAS CURRENT (mA) 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 50 60 70 80 90 100 T, TEMPERATURE (C) Figure 15. Gate Bias versus Temperature MHVIC2115R2 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 31 2200 2250 2300 ARCHIVE INFORMATION Z o = 50 Ω f = 2170 MHz Zload f = 2110 MHz f = 2170 MHz Zin f = 2110 MHz VDD = 27 Vdc, IDQ = 1411 mA, Pout = 15 W Avg. f MHz 2110 2140 2170 Zin Zin Ω 72.55 + j12.8 71.40 + j9.9 70.20 + j7.1 Zload Ω 4.25 + j1.00 4.13 + j1.37 4.12 + j1.46 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 16. Series Equivalent Input and Load Impedance MHVIC2115R2 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC −−− 0.600 0_ 7_ 0.200 0.200 0.100 D e/2 D1 8 9 E1 8X B BOTTOM VIEW E CB S bbb M ARCHIVE INFORMATION A A2 DATUM PLANE SEATING PLANE c H aaa C SECT W - W L1 ccc C q W W L 1.000 0.039 DETAIL Y A1 GAUGE PLANE CASE 978 - 03 ISSUE C PFP- 16 MHVIC2115R2 8 RF Device Data Freescale Semiconductor ÉÉ ÇÇ ÉÉ ÇÇ b M Y c1 CA S DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc ARCHIVE INFORMATION b1 ARCHIVE INFORMATION Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHVIC2115R2 Document Number:Data RF Device MHVIC2115R2 Rev. 4, 8/2006 Freescale Semiconductor 9 ARCHIVE INFORMATION How to Reach Us: