MRF21125R3

Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF. Output Power — 20 Watts Efficiency — 18% Gain — 13 dB IM3 — - 43 dBc ACPR — - 45 dBc • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF21125R3 MRF21125SR3 2110 - 2170 MHz, 125 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF21125R3 CASE 465C - 02, STYLE 1 NI - 880S MRF21125SR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 330 1.89 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.53 Unit °C/W © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF21125R3 MRF21125SR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 300 μA) Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) Drain- Source On - Voltage (VGS = 10 V, ID = 1 A) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 5.4 — pF gfs VGS(th) VGS(Q) VDS(on) — 2 2.5 — 10.8 — 3.9 0.12 — 4 4.5 — S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 — — — — — — 1 10 Vdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured at f1 - 5 MHz and f2 +5 MHz referenced to carrier channel power.) Input Return Loss (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 1. Part internally matched both on input and output. (continued) Gps 12 13 — dB η 17 18 — % IM3 — - 43 - 40 dBc ACPR — - 45 - 40 dBc IRL — - 12 - 9.0 dB MRF21125R3 MRF21125SR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Typical Two - Tone Performance (In Freescale Test Fixture) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Typical CW Performance Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz) Gps η — — 11.5 46 — — dB % Gps — 12 — dB Symbol Min Typ Max Unit η — 34 — % IMD — - 30 — dBc MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 3 B1 R4 VGG + R2 + C2 C3 + C4 R1 R3 C5 C6 C7 C8 C9 C10 W1 + C11 + C12 C13 C14 VDD + Z6 RF INPUT Z7 RF OUTPUT Z1 C1 Z2 Z3 Z4 Z5 DUT Z8 Z9 Z10 Z11 Z12 C15 Z13 C16 Z1 Z2 Z3 Z4 Z5 Z6 Z7 1.212″ x 0.082″ Microstrip 0.236″ x 0.082″ Microstrip 0.086″ x 0.254″ Microstrip 0.357″ x 0.082″ Microstrip 0.274″ x 1.030″ Microstrip 0.466″ x 0.050″ Microstrip 0.501″ x 0.050″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13 PCB 0.600″ x 1.056″ Microstrip 0.179″ x 0.219″ Microstrip 0.100″ x 0.336″ Microstrip 0.534″ x 0.142″ Microstrip 0.089″ x 0.080″ Microstrip 0.620″ x 0.080″ Microstrip Arlon GX0300 - 55- 22, 0.030″, εr = 2.55 Figure 1. MRF21125 Test Circuit Schematic Table 5. MRF21125 Test Circuit Component Designations and Values Designators B1 C1 C2, C4, C11, C12 C3, C7 C5, C14 C6 C8 C9 C10 C13 C15 C16 R1 R2 R3 R4 W1 Description Ferrite Bead (Square), Fair Rite #2743019447 9.1 pF Chip Capacitor, ATC #100B9R1CCA500X 22 μF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 20000 pF Chip Capacitors, ATC #100B203JCA50X 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X 100000 pF Chip Capacitor, ATC #100B104JCA50X 10000 pF Chip Capacitor, ATC #100B103JCA50X 7.5 pF Chip Capacitor, ATC #100B7R5CCA500X 1.2 pF Chip Capacitor, ATC #100B1R2CCA500X 0.1 μF Chip Capacitor, Kemet #CDR33BX104AKWS 16 pF Chip Capacitor, ATC #100B160KP500X 0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL 1.0 kΩ, 1/8 W Chip Resistor 560 kΩ, 1/8 W Chip Resistor 4.7 Ω, 1/8 W Chip Resistor 12 Ω, 1/8 W Chip Resistor Solid Copper Buss Wire, 16 AWG MRF21125R3 MRF21125SR3 4 RF Device Data Freescale Semiconductor VGG V DD C11 C9 C10 C8 R4 C7 C6 C12 W1 C13 C14 B1 R1 R2 C2 C3 C4 R3 C5 C15 C1 C16 MRF21125 Rev 5 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21125 Test Circuit Component Layout MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS −20 −30 −40 −50 −60 (dB) −70 −80 −90 −100 −110 −120 f, FREQUENCY (MHz) −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW +IM3 in 3.84 MHz BW 3.84 MHz Channel BW η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) VDD = 28 Vdc, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz 25 Channel Spacing (Channel Bandwidth): 10 MHz @ 3.84 MHz BW Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 20 η Gps 15 10 5 0 ACPR −5 4 12 20 28 8 16 24 Pout, OUTPUT POWER (WATTS, AVG. (W−CDMA)) 32 −55 −60 IM3 30 −20 −25 −30 −35 −40 −45 −50 ± IM3 (dBc), ± ACPR (dBc) −10 Figure 3. 2 - Carrier (10 MHz Spacing) W - CDMA Spectrum Figure 4. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 50 40 35 30 25 20 15 10 5 0 2080 2100 2120 2160 2140 f, FREQUENCY (MHz) 2180 IMD η 0 −5 −10 −15 −20 Gps −25 −30 −35 −40 2200 160 Pout , OUTPUT POWER (WATTS) 144 128 112 96 80 64 48 32 16 0 0 VDD = 28 Vdc IDQ = 1600 mA f = 2120 MHz Pout η P3dB = 156 W 46 42 38 34 30 26 22 18 IRL VDD = 28 Vdc Pout = 125 W (PEP) IDQ = 1600 mA Two−Tone Measurement, 10 MHz Tone Spacing P1dB = 135 W Gps 14 10 6 16 2 4 6 8 10 12 Pin, INPUT POWER (WATTS) 14 Figure 5. CW Performance Figure 6. Broadband Linearity Performance IMD, INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 −45 1600 mA −50 1300 mA −55 −60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 2000 mA 1000 mA VDD = 28 Vdc f1 = 2112.5 MHz, f2 = 2122.5 MHz Two−Tone Measurement, 10 MHz Tone Spacing G ps , POWER GAIN (dB) 14 2000 mA 1600 mA 13 1300 mA 1000 mA 12 11 VDD = 28 Vdc f1 = 2112.5 MHz, f2 = 2122.5 MHz Two−Tone Measurement, 10 MHz Tone Spacing 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 10 Figure 7. Intermodulation Distortion versus Output Power MRF21125R3 MRF21125SR3 6 Figure 8. Power Gain versus Output Power RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 176 f = 2110 MHz Zo = 10 Ω Zload 2170 MHz f = 2110 MHz Zsource 2170 MHz VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg.), 2−Carrier W−CDMA f MHz 2110 2140 2170 Zsource Ω 3.81 - j6.86 4.33 - j7.90 4.84 - j8.46 Zload Ω 1.56 - j1.58 1.53 - j1.90 1.48 - j2.26 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 7 NOTES MRF21125R3 MRF21125SR3 8 RF Device Data Freescale Semiconductor NOTES MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 9 NOTES MRF21125R3 MRF21125SR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M (FLANGE) 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 DIM A B C D E F G H K M N Q R S aaa bbb ccc bbb M M B M M bbb ccc H M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA M B S N M M M (LID) aaa M TA M B C F E A (FLANGE) T A SEATING PLANE CASE 465B - 03 ISSUE D NI - 880 MRF21125R3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B 1 (FLANGE) B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc C F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF21125SR3 MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21125R3 MRF21125SR3 1Rev. 9, 5/2006 2 Document Number: MRF21125 RF Device Data Freescale Semiconductor