MW7IC2425NR1

Freescale Semiconductor Technical Data Document Number: MW7IC2425N Rev. 0, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 28 Volts, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 Watts CW, f = 2450 MHz Power Gain — 27.7 dB Power Added Efficiency — 43.8% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW Output Power Features • Qualified Up to a Maximum of 28 VDD Operation • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • Excellent Thermal Stability • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 2450 MHz, 25 W CW, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2425NR1 CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2425GNR1 CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2425NBR1 VDS1 RFin RFout/VDS2 GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout/VDS2 VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation (1) 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power (1,2) Symbol VDS VGS VDD Tstg TC TJ Pin Value - 0.5, +65 - 0.5, +10 32, +0 - 65 to +150 150 225 20 Unit Vdc Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture) Characteristic Thermal Resistance, Junction to Case (Case Temperature 80°C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 55 mA Stage 2, 28 Vdc, IDQ2 = 195 mA Symbol RθJC Value (2,3) 6.1 1.2 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 55 mA) (4) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 55 mAdc) (4,5) VGS(th) VGS(Q) VGG(Q) 1.2 — 10.3 1.9 2.7 11.2 2.7 — 12.6 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. 4. Measured in Freescale Narrowband Test Fixture. 5. See Appendix A for functional test measurements and test fixture. (continued) MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Stage 2 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 80 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 195 mAdc) (1) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 195 mAdc) (1,2) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 800 mAdc) Stage 2 - Dynamic Characteristics (3) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 111 — pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 9.5 0.15 1.9 2.7 10.5 0.47 2.7 — 11.5 0.8 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture,(2) 50 ohm system) VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz Power Gain Power Added Efficiency Input Return Loss (2) Gps PAE IRL 25.5 41.5 — 27.7 43.8 - 18 30.5 — - 10 dB % dB Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Gps PAE PAR ACPR IRL 25.5 15 — — — 28.5 17 9 - 50 - 15 30.5 — — - 46 - 10 dB % dB dBc dB Measured in Freescale Narrowband Test Fixture. See Appendix A for functional test fixture documentation. Part internally matched both on input and output. Measurement made with device in straight lead configuration before any lead forming operation is applied. MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 3 VDD1 C17 C9 C8 VD2 C16 C15 B1 28 V C14 C7 1 2 3 4 5 Z1 Z2 Z3 C4 C5 C6 VG1 R4 VG2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500″ 0.075″ 1.640″ 0.100″ 0.151″ 0.025″ 0.100″ 0.306″ x 0.027″ x 0.127″ x 0.027″ x 0.042″ x 0.268″ x 0.268″ x 0.056″ x 0.056″ Microstrip Microstrip Microstrip Microstrip Microstrip x 0.056″ Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040″ x 0.061″ Microstrip 0.020″ x 0.050″ Microstrip 0.050″ x 0.050″ Microstrip 0.050″ x 0.027″ Microstrip 0.338″ x 0.020″ Microstrip 1.551″ x 0.027″ Microstrip Rogers R04350B, 0.0133″, εr = 3.48 R5 R6 C2 C3 C1 Z4 6 C11 7 NC 8 9 10 11 NC C10 Quiescent Current Temperature Compensation NC NC NC NC 14 Z5 Z6 Z7 Z8 Z9 Z10 Z11 DUT NC 16 NC 15 Z13 Z12 Z14 C13 C12 RF INPUT RF OUTPUT NC 13 NC 12 * Line length includes microstrip bends Figure 3. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Schematic Table 6. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Designations and Values Part B1 C1, C4, C7, C12, C15 C2, C5, C8, C13 C3, C6, C9, C14 C10 C11 C16, C17 R1, R4 R2, R3, R5, R6 Description 47 Ω, 100 MHz Short Ferrite Bead 6.8 pF Chip Capacitors 10 nF Chip Capacitors 1 μF, 50 V Chip Capacitors 2.4 pF Chip Capacitor 3.3 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 12 KΩ, 1/4 W Chip Resistors 1 KΩ, 1/4 W Chip Resistors Part Number 2743019447 ATC600S6R8CT250XT C0603C103J5RAC GRM32RR71H105KA01B ATC600S2R4BT250XT ATC600S3R3BT250XT GRM55DR61H106KA88B CRCW12061202FKEA CRCW12061001FKEA Manufacturer Fair - Rite ATC Kemet Murata ATC ATC Murata Vishay Vishay MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 4 RF Device Data Freescale Semiconductor MW7IC2425N Rev. 1 B1 C17 C8 C7 C4 R4 R5 C5 R6 C1 C2 VG1 R1 VG2 R2 R3 C6 C9 C15 C14 C13 CUT OUT AREA C16 C12 C10 C11 C3 Figure 4. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Layout MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — NARROWBAND 30 50 PAE, POWER ADDED EFFICIENCY (%) 49 48 Pout, OUTPUT POWER (dBm) 47 P1dB = 44.5 dBm (28.05 W) 46 45 Actual 44 43 42 41 13 14 15 16 17 18 19 20 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ1 = 55 mA IDQ2 = 195 mA, f = 2450 MHz Ideal P3dB = 44.9 dBm (30.9 W) Gps, POWER GAIN (dB) 29 40 28 30 27 VDD = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 1 10 Pout, OUTPUT POWER (WATTS) CW 20 26 10 25 0 100 Figure 5. Power Gain and Power Added Efficiency versus CW Output Power 30 Figure 6. CW Output Power versus Input Power 50 PAE, POWER ADDED EFFICIENCY (%) PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 29 VD1 = 32 V 28 30 V 27 28 V 26 VD2 = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 0.1 1 10 40 30 20 10 25 0 100 Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD1 30 28 V 30 V 32 V 30 VD2 = 28 V 27 30 V 32 V 26 VD1 = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 1 10 20 50 Gps, POWER GAIN (dB) 29 40 28 10 25 0.1 0 100 Pout, OUTPUT POWER (WATTS) CW Figure 8. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD2 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — NARROWBAND 30 50 IDQ1 varied from 45 mA to 65 mA 40 in 5 mA steps IDQ1 = 65 mA 60 mA 55 mA 50 mA 45 mA 30 Gps, POWER GAIN (dB) 29 28 27 20 VDD = 28 Vdc 10 IDQ2 = 195 mA f = 2450 MHz 0 100 26 25 1 10 Pout, OUTPUT POWER (WATTS) CW Figure 9. Power Gain and Power Added Efficiency versus CW Output Power as a Function of IDQ1 29 50 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 28 215 mA 195 mA IDQ2 = 235 mA 40 175 mA 27 155 mA IDQ2 varied from 155 mA to 235 mA in 20 mA steps VDD = 28 Vdc IDQ1 = 55 mA f = 2450 MHz 1 10 Pout, OUTPUT POWER (WATTS) CW 30 26 20 25 10 100 Figure 10. Power Gain and Power Added Efficiency versus CW Output Power as a Function of IDQ2 109 108 MTTF (HOURS) 107 2nd Stage 1st Stage 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 25 W CW, and PAE = 43.8%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 7 PAE, POWER ADDED EFFICIENCY (%) Z o = 50 Ω Zload f = 2450 MHz Zsource f = 2450 MHz VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW f MHz 2450 Zsource W 32 - j6.256 Zload W 6.2 - j1.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance — Narrowband MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 9 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 10 RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 11 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 12 RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 13 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 14 RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 15 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 16 RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 17 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Mar. 2009 • Initial Release of Data Sheet Description MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 18 RF Device Data Freescale Semiconductor APPENDIX A MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA MW7IC2725N Rev. 1.3 B1 C17 C8 C7 C4 C5 R4 R5 C1 R6 C9 C16 C15 C14 C13 CUT OUT AREA C12 C2 C10 C11 VG1 R1 VG2 R2 R3 C6 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500″ 0.075″ 1.640″ 0.100″ 0.151″ 0.025″ 0.050″ 0.356″ x 0.027″ x 0.127″ x 0.027″ x 0.042″ x 0.268″ x 0.268″ x 0.056″ x 0.056″ Microstrip Microstrip Microstrip Microstrip Microstrip x 0.056″ Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040″ x 0.061″ Microstrip 0.020″ x 0.050″ Microstrip 0.050″ x 0.050″ Microstrip 0.050″ x 0.027″ Microstrip 0.338″ x 0.020″ Microstrip 1.551″ x 0.027″ Microstrip Rogers R04350B, 0.0133″, εr = 3.48 * Line length includes microstrip bends Figure 1. MW7IC2425NR1(GNR1)(NBR1) Test Circuit Component Layout Table 1. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL 25.5 15 — — — 28.5 17 9 - 50 - 15 30.5 — — - 46 - 10 dB % dB dBc dB (continued) MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 19 APPENDIX A MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued) Table 1. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Stage 1 - On Characteristics Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 77 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test) Stage 2 - On Characteristics Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 275 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test) VGS(Q) VGG(Q) — 11 2.7 14 — 18 Vdc Vdc VGS(Q) VGG(Q) — 12.5 2.7 15.8 — 19.5 Vdc Vdc Symbol Min Typ Max Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case (Case Temperature 81°C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA Symbol RθJC Value 5.5 1.3 Unit °C/W MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 20 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 Document Number: RF Device Data MW7IC2425N Rev. 0, 3/2009 Freescale Semiconductor 21