1MBI600NN-060

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Terminals *3 Ratings 600 ± 20 600 1200 600 1200 2000 +150 -40 ∼ +125 2500 3.5 4.5 1.7 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) *3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=600mA VGE=15V IC=600A VGE=0V VCE=10V f=1MHz VCC=300V IC=600A VGE=± 15V RG=2.7Ω IF=600A VGE=0V IF=600A Min. Typ. Max. 4.0 60 7.5 2.8 Units mA µA V V pF 1.2 0.6 1.0 0.35 3.0 300 4.5 39600 8800 4000 0.6 0.2 0.6 0.2 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.063 0.11 Units °C/W 0.0125 Collector current vs. Collector-Emitter voltage T j=25°C 1400 V GE =20V,15V,12V 1200 1200 C Collector current vs. Collector-Emitter voltage T j=125°C 1400 V GE =20V,15V,12V, C [A] 1000 10V 800 600 400 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] [A] 1000 10V 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] 8V Collector-Emitter vs. Gate-Emitter voltage T j=25°C Collector current : I Collector current : I Collector-Emitter vs. Gate-Emitter voltage T j=125°C 10 10 [V] CE 8 CE [V] 8 6 Collector-Emitter voltage :V Collector-Emitter voltage V 6 4 IC= 1200A 4 IC= 1200A 2 600A 300A 2 600A 300A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] Switching time vs. Collector current V CC =300V, R G =2.7 Ω , V GE ±15V, T j=25°C 1000 t on 1000 t off tr tf 100 Switching time vs. Collector current V CC =300V, R G =2.7 Ω , V GE =±15V, Tj=125°C t off t on tr tf [nsec] on, t r, t off, t f on, t r, t off, t f [nsec] Switching time : t 100 10 Switching time : t 10 0 200 400 600 800 1000 Collector current : I C [ A] 0 200 400 600 800 1000 Collector current : I C [ A] Switching time vs. R G V CC =300V, I C = 6 0 0 A , V GE = ± 1 5 V , T j = 2 5 ° C 500 ton toff Dynamic input characteristics T j= 2 5 ° C 25 V CC = 2 0 0 V 300V 400V on, t r, t off, t f [nsec] 1000 [V] 400 CE 15 tf 100 200 10 100 5 10 1 Gate resistance : R G [ Ω ] Forward current vs. Forward voltage V GE = O V 1400 10 0 0 500 1000 1500 2000 2500 3000 0 3500 G a t e c h a r g e : Q G [ nC] Reverse recovery characteristics t rr, I rr v s. I F I rr 1 2 5 ° C [A] 1200 [nsec] T j= 1 2 5 ° C 25°C rr [A] I rr 2 5 ° C t rr 1 2 5 ° C Reverse recovery current : I Forward current : I 800 600 400 200 0 0 1 2 Forward voltage : V F [ V] 3 4 Reverse recovery time :t 1000 F rr 100 t rr 2 5 ° C 0 200 400 600 800 1000 Forward current : I F [ A] Reversed biased safe operating area Transient thermal resistance 6000 Diode + V GE = 1 5 V , - V GE < 1 5 V , T j < 1 2 5 ° C , R G > 2.7 Ω [°C/W] C [A] 0,1 5000 th(j-c) IGBT Collector current : I 4000 SCSOA (non-repetitive pulse) 3000 Thermal resistance : R 0,01 2000 1000 RBSOA (Repetitive pulse) 0 0 ,001 0,01 0,1 1 0 100 200 300 400 500 600 Pulse width : PW [sec] Collector-Emitter voltage : V C E [ V] Gate-Emitter Voltage : V tr Collector-Emitter voltage : V 300 Switching time : t GE [V] 20 Switching loss vs. Collector current V CC=300V, R G =2.7 Ω , V GE =±15V 60 100 Capacitance vs. Collector-Emitter voltage T j=25°C , E off , E rr [mJ/cycle] , C oes , C res [nF] 50 E off 1 25°C 40 C ies E off 2 5°C 30 ies on E on 1 25°C 20 10 Switching loss : E E on 2 5°C Capacitance : C C oes C res 10 E rr 1 25°C E rr 2 5°C 0 0 200 400 600 800 1000 1 0 5 10 15 20 25 30 35 C ollector Current : I C [ A] Collector-Emitter Voltage : V CE [ V] Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com