2MBI1200U4G-170

2MBI1200U4G-170 IGBT MODULE (U series) 1700V / 1200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp Conditions Maximum ratings 1700 ±20 1600 1200 3200 2400 1200 2400 6250 150 -40 to +125 3400 5.75 10 2.5 Units V V Maximum Ratings and Characteristics Continuous 1ms -Ic -Ic pulse 1ms Collector power dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso AC : 1min. Mounting Screw torque (*2) Main Terminals Sense Terminals Tc=25°C Tc=80°C Tc=25°C Tc=80°C A W °C VAC Nm Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols I CES I GES VGE (th) VCE (sat) (main terminal) VCE (sat) (chip) Cies ton tr toff tf VF (main terminal) VF (chip) trr R lead Conditions VGE = 0V, VCE = 1700V VCE = 0V, VGE = ±20V VCE = 20V, I C = 1200mA VGE = 15V I C = 1200A Characteristics min. typ. max. 1.0 1600 5.5 6.5 7.5 2.57 2.76 2.97 2.25 2.40 2.65 112 3.10 1.25 1.45 0.25 2.12 2.51 2.32 1.80 2.15 2.00 0.45 0.27 Units mA nA V V nF µs Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 900V, I C = 1200A, VGE = ±15V, Tj = 125°C, Rgon = 4.7Ω, Rgoff = 1.2Ω VGE = 0V I F = 1200A I F = 1200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*3) Note *3: Biggest internal terminal resistance among arm. V µs mΩ Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*4) Characteristics min. typ. max. 0.020 0.033 0.006 Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI1200U4G-170 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C, chip 2800 2400 Collector current : Ic [A] IGBT Modules Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C, chip 2800 VGE=20V 15V 12V VGE=20V 15V 12V Collector current : Ic [A] 2400 2000 1600 2000 1600 1200 800 400 0 0.0 8V 10V 10V 1200 800 400 0 0.0 8V 1.0 2.0 3.0 4.0 5.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V, chip 2800 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C, chip 10 2400 Collector current : Ic [A] Tj=25°C Tj=125°C 8 2000 1600 1200 800 400 0 0.0 6 4 Ic=2400A Ic=1200A Ic=600A 2 0 1.0 2.0 3.0 4.0 5.0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25°C 1000 Capacitance : Cies, Coes, Cres [nF] Collector-Emitter voltage : VCE [V] Dynamic Gate charge (typ.) Tj=25°C 1000 800 600 400 200 0 VCE VGE 25 20 15 10 5 0 5000 Gate-Emitter voltage : VGE [V] Cies 100 10 Cres Coes 1 0 10 20 30 Collector-Emitter voltage : VCE[V] 0 1000 2000 3000 4000 Gate charge : Qg [nC] 2 2MBI1200U4G-170 IGBT Modules Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rgon=4.7Ω, Rgoff=1.2Ω, Tj=125°C 4.0 Switching time : ton, tr, toff, tf [us] Switching time : ton, tr, toff, tf [us] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=1200A, VGE=±15V, Tj=125°C 6.0 5.0 4.0 3.0 2.0 1.0 tf 0.0 2000 0 2 4 6 8 10 12 14 tof f tr ton 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 400 800 1200 1600 Collector current : Ic [A] ton tr toff tf Gate resistance : Rg [Ω] Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rgon=4.7Ω, Rgoff=1.2Ω, Tj=125°C 1000 Switching loss : Eon, Eoff, Err [mJ/pulse] Switching loss : Eon, Eoff, Err [mJ/pulse] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=1200A, VGE=±15V, Tj=125°C 1100 1000 900 800 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 Gate resistance : Rg [Ω] Err Eof f 900 800 700 600 500 400 300 200 100 0 0 400 800 1200 1600 Eon Eoff Eon Err 2000 Collector current : Ic [A], Forward current : IF [A] Reverse bias safe operating area (max.) ±VGE=15V, Tj=125°C/chip 2800 2400 Collector current : Ic [A] 2000 1600 1200 800 400 0 0 400 800 1200 1600 2000 Collector-Emitter voltage : VCE [V] 3 2MBI1200U4G-170 IGBT Modules Forward current vs. Forward on voltage (typ.) chip 2800 Reverse recovery current : Irr [A] Reverse recovery characteristics (typ.) Vcc=900V, VGE=±15V, Rgon=4.7Ω, Tj=125°C 1200 1.2 I rr 1.1 0.9 0.8 0.7 0.6 t rr 0.5 0.4 0.3 0.2 0.1 0 400 800 1200 1600 0.0 2000 Reverse recovery time : trr [us] 2400 Forward current : IF [A] Tj =25°C Tj =125°C 1100 1000 900 800 700 600 500 400 300 200 100 0 1.0 2000 1600 1200 800 400 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forward on voltage : VF [V] Forward current : IF [A] Transient thermal resistance (max.) 0.1000 Thermal resistanse : Rth (j-c) [°C/W] FWD I GBT 0.0100 0.0010 0.0001 0.001 0.010 0.100 1.000 Pulse width : Pw [sec] 4 2MBI1200U4G-170 IGBT Modules Outline Drawings, mm Equivalent Circuit Schematic main emitter main collector E1 sense emitter C2 C2 sense collector E1 gate sense collector G1 C1 C1 main collector G2 E2 E2 main emitter gate sense emitter 5 2MBI1200U4G-170 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6