2MBI150SC-120

2MBI150SC-120 1200V / 150A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure IGBT Module Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Symbol VCES VGES Tc=25°C IC Tc=80°C Tc=25°C IC pulse Tc=80°C -IC -IC pulse PC Tj Tstg V is Mounting *2 Terminals *2 Rating 1200 ±20 200 150 400 300 150 300 1000 +150 -40 to +125 AC 2500 (1min. ) 3.5 3.5 Unit V V A A A A A A W °C °C V N·m N·m Equivalent Circuit Schematic C2E1 C1 E2 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 Screw torque G1 E1 G2 E2 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. Max. – – 2.0 – – 0.4 5.5 7.2 8.5 – 2.3 2.6 – 2.8 – – 18000 – – 3750 – – 3300 – – 0.35 1.2 – 0.25 0.6 – 0.1 – – 0.45 1.0 – 0.08 0.3 – 2.3 3.0 – 2.0 – – – 0.35 Characteristics Min. Typ. – – – – – 0.025 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=150mA Tc=25° C VGE=15V, IC=150A Tc=125°C VGE=0V VCE=10V f=1MHz VCC =600V IC=150A VGE=±15V RG=5.6 ohm Tj=25°C Tj=125°C IF=150A Conditions Max. 0.125 IGBT 0.26 Diode the base to cooling fin – °C/W °C/W °C/W IF=150A, VGE=0V Unit mA µA V V pF µs Turn-off time Forward on voltage Reverse recovery time V µs Thermal resistance characteristics Item Thermal resistance Unit *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 2 MBI150SC-120 Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) 350 VGE= 20V15V 12V 350 IGBT Module Collector current vs. Collector-Emiiter voltage Tj= 125°C (typ.) VGE= 20V 15V 12V 300 300 250 250 Collector current : Ic [ A ] Collector current : Ic [ A ] 200 10V 150 200 10V 150 100 100 50 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 50 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 350 Tj= 25°C Tj= 125°C 8 250 10 Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 300 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 200 6 150 4 Ic= 300A 2 Ic= 150A Ic= 75A 100 50 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 50000 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=150A, Tj= 25°C 25 800 Capacitance : Cies, Coes, Cres [ pF ] 20 Cies 10000 Collector - Emitter voltage : VCE [ V ] 600 15 5000 400 10 Coes 1000 Cres 500 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 200 5 0 0 500 1000 Gate charge : Qg [ nC ] 0 1500 2 MBI150SC-120 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 25°C 1000 1000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 125°C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 50 100 150 200 250 Collector current : Ic [ A ] 50 0 50 100 150 200 250 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C 5000 ton 40 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6ohm Eon(125°C) tr 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff Switching time : ton, tr, toff, tf [ nsec ] 30 Eon(25°C) 20 Eoff(125°C) 500 Eoff(25°C) 10 Err(125°C) 100 tf Err(25°C) 50 1 10 Gate resistance : Rg [ ohm ] 100 0 0 100 200 300 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C 100 Eon 300 350 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 80 250 60 200 40 Eoff 20 150 100 50 Err 0 1 10 Gate resistance : Rg [ ohm ] 100 0 0 200 400 600 800 1000 1200 1400 2 MBI150SC-120 IGBT Module Forward current vs. Forward on voltage (typ.) 350 Tj=125°C Tj=25°C trr(125°C) 300 Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=5.6ohm 300 250 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Irr(125°C) 100 trr(25°C) Forward current : IF [ A ] 200 Irr(25°C) 150 100 50 0 0 1 2 Forward on voltage : VF [ V ] 3 4 10 0 50 100 150 200 250 Forward current : IF [ A ] Transient thermal resistance 0.5 FWD Thermal resistanse : Rth(j-c) [ °C/W ] IGBT 0.1 0.05 0.01 0.005 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 240g