2MBI150U4H-120

2MBI150U4H-120 IGBT MODULE (U series) 1200V / 150A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Ic pulse Conditions Maximum ratings 1200 ±20 200 150 400 300 150 300 780 +150 -40 to +125 2500 3.5 4.5 Units V V Continuous 1ms 1ms 1 device -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*2) Tc=25°C Tc=80°C Tc=25°C Tc=80°C A AC : 1min. W °C °C VAC N·m Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols ICES IGES VGE (th) VCE (sat) (teminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (teminal) VF (chip) trr R lead Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 150mA VGE = 15V IC = 150A VGE Characteristics min. typ. max. 2.0 400 4.5 6.5 8.5 2.00 2.15 2.20 1.90 2.05 2.10 17 0.32 1.20 0.10 0.60 0.03 0.41 1.00 0.07 0.30 1.75 1.90 1.85 1.65 1.80 1.75 0.35 0.53 Units mA nA V V nF Tj=25°C Tj=125°C Tj=25°C Tj=125°C = 0V, VCE = 10V, f = 1MHz VCC = 600V IC = 150A VGE = ±15V RG = 4.7Ω VGE = 0V IF = 150A IF = 150A Tj=25°C Tj=125°C Tj=25°C Tj=125°C µs Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*3) Note *3: Biggest internal terminal resistance among arm. V µs mΩ Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*4) Characteristics min. typ. max. 0.16 0.24 0.025 Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI150U4H-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip IGBT Modules 400 400 Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip Collector current : Ic [ A ] 300 Collector current : Ic [A ] VGE=20V 15V 12V 300 VGE=20V 15V 12V 200 10V 100 8V 200 10V 100 8V 0 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 Collector current vs. Collector-Emitter voltage (typ.) 400 VGE=15V / chip 10 Collector-Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip Collector current : Ic [ A ] 300 Tj=25oC Tj=125oC 8 6 200 4 Ic=300A Ic=150A Ic=75A 100 2 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 0 5 10 15 20 Gate-Emitter voltage : VGE [ V ] 25 Capacitance vs. Collector-Emitter voltage (typ.) Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] VGE=0V, f=1MHz, Tj=25oC Dynamic Gate charge (typ.) Vcc=600V, Ic=150A, Tj=25oC Cies 10.0 VGE Cres 1.0 Coes VCE 0 0 200 400 600 Gate charge : Qg [ nC ] 800 0.1 0 10 20 Collector-Emitter voltage : VCE [ V ] 30 2 2MBI150U4H-120 IGBT Modules 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=25oC Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=125oC 1000 toff ton 100 tr tf 1000 ton toff tr 100 tf 10 0 50 100 150 200 250 Collector current : Ic [ A ] 300 10 0 50 100 150 200 250 Collector current : Ic [ A ] 300 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj=25oC Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=4.7Ω 25 20 15 10 5 0 0 50 100 150 200 Collector current : Ic [ A ] 250 300 Eoff(125oC) Eon(125oC) Err(125oC) Eoff(25oC) Eon(25oC) Err(25oC) 1000 tr 100 ton toff tf 10 1 10 100 Gate resistance : RG [ Ω ] 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 40 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj=125oC Eon Collector current : Ic [ A ] 400 Reverse bias safe operating area (max.) +VGE=15V, -VGE = 4.7Ω, Tj