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2MBI450VJ-120-50
IGBT MODULE (V series) 1200V / 450A / 2 in one package
Features
High speed switching Voltage drive Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Symbols VCES VGES Ic Ic pulse Collector current -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) PC-Board (*5) Items Collector-Emitter voltage Gate-Emitter voltage Conditions Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Maximum ratings 1200 ±20 450 900 450 900 2270 175 150 125 -40 to +125 2500 3.5 4.5 0.6 Units V V A W °C VAC Nm
Inverter
AC : 1min.
Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6) Note *5: Recommendable value : 0.4-0.6 Nm (M2.5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Symbols
ICES IGES VGE (th) VCE (sat) (terminal)
Conditions
VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 450mA VGE = 15V IC = 450A VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 450A VGE = ±15V RG = 0.52Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Collector-Emitter saturation voltage VCE (sat) (chip) Inverter Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time Thermistor Resistance B value trr R B
VGE = 0V IF = 450A IF = 450A T=25°C T=100°C T=25/50°C
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.25 2.70 2.55 2.60 1.75 2.20 2.05 2.10 41 550 1200 180 600 120 1050 2000 110 350 2.20 2.65 2.35 2.30 1.70 2.15 1.85 1.80 200 600 5000 465 495 520 3305 3375 3450 Characteristics min. typ. max. 0.066 0.100 0.0167 -
Units mA nA V
V
nF nsec
V
nsec Ω K
Thermal resistance characteristics
Items Thermal resistance (1device) Contact thermal resistance (1device) (*6) Symbols Rth(j-c) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Units °C/W
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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2MBI450VJ-120-50
Characteristics (Representative)
[INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
1000 VGE=20V15V 800 Collector current: Ic [A] Collector current: Ic [A] 12V 800
IGBT Modules
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[INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip
1000 VGE= 20V 15V 12V
600 10V 400
600 10V 400
200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage: VCE [V]
200
8V
0 0 1 2 3 4 5 Collector-Emitter voltage: VCE [V]
[INVERTER] Collector current vs. Collector-Emitter v oltage (typ.) VGE= 15V / chip
1000 Tj=25°C 125°C 800 Collector Current: Ic [A] 150°C Collector-Emitter Voltage: VCE [V] 8
[INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip
10
600
6
400
4 Ic=900A Ic=450A Ic=225A 5 10 15 20 25
200
2
0 0 1 2 3 4 5 Collector-Emitter Voltage: VCE [V]
0 Gate-Emitter Voltage: VGE [V]
[INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C
Gate Capacitance: Cies, Coes, Cres [nF] *** Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] 1000
[INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=450A, Tj= 25°C
100
Cies
VCE
VGE
10
Cres
Coes 1 0 10 20 30
0
1000
2000
3000
4000
5000
6000
Collector-Emitter voltage: VCE [V]
Gate charge: Qg [nC]
2
2MBI450VJ-120-50
IGBT Modules
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[INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=25°C
10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec]
[INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=125°C, 150°C
10000 Tj=125oC Tj=150oC 1000 toff ton tr 100 tf
1000
toff ton tr
100
tf
10 0 200 400 600 800 1000
10 0 200 400 600 800 1000
Collector current: Ic [A]
Collector current: Ic [A]
[INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse] 10000 Switching time: ton, tr, toff, tf [nsec] Tj=125 C Tj=150oC 1000
o
[INVERTER] Switching loss vs. Collector c urrent (typ.) Vcc=600, VGE=±15V, Rg=0.52Ω, Tj=125°C, 150°C
150 Tj=125oC Tj=150oC Eoff 100
toff ton tr
tf 100
Err 50
Eon 0 0 200 400 600 800 1000
10 0.1 1 10 100
Gate resistance: Rg [Ω]
Collector current: Ic [A]
[INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse] 250 Tj=125oC Tj=150oC Eon Collector current: Ic [A]
[INVERTER] Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, Rg=0.52Ω, Tj=150°C
1400 1200 1000 800 600 400 200 0
200
150
100
Eoff
50 Err 0 0 1 10 100
0
500
1000
1500
Gate resistance: Rg [Ω]
Collector-Emitter voltage: VCE [V]
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2MBI450VJ-120-50
IGBT Modules
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[INVERTER] Forward Current vs. Forward Voltage (typ.) chip
1000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=25°C
10000
Forward current: IF [A]
800 Tj=25°C 600
1000 Irr
400 125°C 200 150°C 0 0 1 2 3 Forward on voltage: VF [V]
100
trr
10 0 200 400 600 800 1000 Forward current: IF [A]
[INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=125°C, 150°C
Tj=125oC Tj=150oC 1000 Irr trr 100 Thermal resistanse: Rth(j-c) [°C/W] *** 10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]
Transient Thermal Resistance (max.)
1
FWD 0.1 IGBT
0.01
10 0 200 400 600 800 1000 Forward current: IF [A]
0.001 0.001
0.01
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR] Temperature characteristic (typ.)
100
Resistance : R [kΩ]
10
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature [°C]
4
2MBI450VJ-120-50
IGBT Modules
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Outline Drawings, mm
Equivalent Circuit Schematic
[ Inverter ] [ Thermistor ]
+
CX1 T1
T2 G1.1 EX1.1 GND G1.2 EX1.2 G1.3 EX1.3
G2.1 Cu-Base EX2.1
G2.2 EX2.2
G2.3 EX2.3
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2MBI450VJ-120-50
IGBT Modules
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WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Systems Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Systems Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Systems Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Systems Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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