2SK3591

2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 150 120 ±40 ±160 ±30 40 387 20 5 2.16 70 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *6 kVrms *1 L=335µH, Vcc=48V *2 Tch< 150°C *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = = *4 VDS < 150V *5 VGS=-30V *6 t=60sec f=60Hz = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=20A VGS=10V RGS=10 Ω VCC =75V ID=40A VGS=10V L=100µH Tch=25°C IF=40A VGS=0V Tch=25°C IF=40A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 31 26 1940 310 24 20 26 50 20 52 15 18 1.10 0.14 0.77 Min. 150 3.0 Typ. Max. 5.0 25 250 100 41 2910 465 36 30 39 75 30 78 22.5 27 1.65 Units V V µA nA mΩ S pF 13 ns nC 40 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.786 58.0 Units °C/W °C/W www.fujielectric.co.jp/denshi/scd 1 2SK3591-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)