2SK3676-01L

2SK3676-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 900 900 ±6 ±24 ±30 6 244 40 5 1.67 195 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=12.4mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph < < *4 VDS < 900V *3 IF< D, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C =-I = < *2 Tch=150°C *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=900V VGS=0V Tch=25°C VDS=720V VGS=0V Tch=125°C VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=3A VGS=10V RGS=10 Ω VCC =450V ID=6A VGS=10V L=12.4mH Tch=25°C IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/µs Tch=25°C Min. 900 3.0 Typ. Max. 5.0 25 250 100 2.50 1125 150 11 32 12 63 16.5 32 4.5 10.5 1.50 Units V V µA nA Ω S pF 3.7 1.92 7.4 750 100 7 21 8.0 42 11 25 3 7 0.90 1.1 5.5 ns nC 6 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.640 75.0 Units °C/W °C/W 1 2SK3676-01L,S,SJ Characteristics FUJI POWER MOSFET 250 Allowable Power Dissipation PD=f(Tc) 8 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C 20V 10V 8.0V 7.0V 200 6.5V 6 6.0V PD [W] ID [A] 4 2 150 100 50 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 5 10 15 20 Tc [°C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 10 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 10 ID[A] 1 gfs [S] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 VGS[V] ID [A] 2.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C VGS=5.5V 6.0V 6.5V 7.0V 8.0V 10V 20V 7 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V 2.5 6 2.4 5 RDS(on) [ Ω ] 2.3 RDS(on) [ Ω ] 4 max. 2.2 3 2.1 2.0 2 typ. 1.9 1 1.8 0 2 4 6 8 10 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 2 2SK3676-01L,S,SJ FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=6A,Tch=25°C 12 Vcc= 180V max. 450V 10 720V VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 8 6 4 2 0 0 5 10 15 20 25 30 35 Tch [°C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C 10 0 Ciss 10 C [nF] 10 -1 Coss IF [A] 1 0.1 0.00 10 -2 Crss 10 -3 10 0 10 1 10 2 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω 800 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V IAS=2A tf 600 10 2 td(off) EAS [mJ] t [ns] 400 IAS=4A td(on) 10 1 IAS=6A tr 200 10 0 0 -1 10 10 0 10 1 0 25 50 75 100 125 150 ID [A] starting Tch [°C] 3 2SK3676-01L,S,SJ Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=90V FUJI POWER MOSFET 10 2 Avalanche Current I AV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 23 1 42 3 1 23 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ 4