2SK3888-01MR

2SK3888-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg VISO Ratings 600 600 9 ±36 ±30 9 462.3 6.0 20 5 60 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Note *1 Note *2 Note *3 Gate(G) Source(S) Note *1:Tch < 150°C,Repetitive and Non-repetitive = Note *2:StartingTch=25°C,IAS=3.6A,L=65.4mH, VCC=60V,RG=50Ω kV/µs VDS< 600V = EAS limited by maximum channel temperature kV/µs Note *4 and avalanch current. Tc=25°C W See to the ‘Avalanche Energy’ graph Ta=25°C Note *3:Repetitive rating:Pulse width limited by °C maximum channel temperature. °C See to the ‘Transient Theemal impedance’ kVrms t=60sec f=60Hz graph Note *4:IF< -ID, -di/dt=50A/µs,VCC< BVDSS,Tch< 150°C = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS =600V VGS=0V Tch=125°C VDS =480V VGS=0V VGS=±30V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS =25V VGS=0V f=1MH VCC=300V ID=4.5A VGS=10V RGS=10 Ω V CC=300V ID=9A VGS=10V IF=9A VGS=0V Tch=25°C IF=9A VGS=0V -di/dt=100A/µs Tch=25°C Test Conditions channel to case channel to ambient Min. 600 3.0 Typ. Max. 5.0 25 250 100 1.00 Units V V µA nA Ω S pF 4.5 0.82 9.0 950 1425 130 195 6.0 9.0 16 24 6.0 9.0 33 50 5.5 8.3 25 38 10 15 8.0 12.0 1.10 1.50 860 7.0 ns nC V ns µC Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 2.083 58 Units °C/W °C/W 1 2SK3888-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 100 90 80 20 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C 20V 10V 8.0V 15 70 60 PD [W] ID [A] 50 40 30 10 6.5V 5 20 10 0 0 25 50 75 100 125 150 0 0 5 10 15 20 6.0V VGS=5.5V 25 30 Tc [°C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 µ s pulse test,VDS=25V,Tch=25°C 100 Typical Transconductance gfs=f(ID):80 µ s pulse test,VDS=25V,Tch=25°C 10 10 ID[A] 1 1 0.1 0.1 0.1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] 2.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C VGS=5.5V 6.0V 6.5V 3.00 2.75 2.50 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V 1.5 2.25 8.0V 10V 20V 2.00 RDS(on) [ Ω ] RDS(on) [ Ω ] 1.75 1.50 1.25 1.00 typ. max. 1.0 0.5 0.75 0.50 0.25 0.0 0 5 10 15 20 0.00 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 2 2SK3888-01MR Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25 °C 12 Vcc= 120V 300V max. 10 VGS(th) [V] 480V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0 0 10 20 30 40 2 4 min. VGS [V] 8 6 Tch [°C] Qg [nC] 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C 10 3 Ciss 10 C [pF] 10 2 Coss IF [A] 1 2 3 10 1 Crss 10 0 10 -1 10 0 10 1 10 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω 500 450 400 350 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V IAS=3.6A 10 2 tf td(off) IAS=5.4A 300 EAV [mJ] t [ns] 250 200 150 IAS=9A td(on) 10 1 tr 100 50 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [°C] 3 2SK3888-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=60V Avalanche Current I AV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4