2SK3917-01MR

2SK3917-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS Ratings 450 450 4.3 ±17.2 ±30 4.3 211 2.1 20 5 2.16 21 +150 -55 to +150 2 Unit V V A A V A mJ mJ kV/µs kV/µs W W °C °C kVrms Remarks VGS=-30V Note *1 Note *2 Note *3 VDS < 450V = Note *4 Ta=25°C Tc=25°C Gate(G) Source(S) Equivalent circuit schematic Drain(D) dV DS /dt dV/dt PD Tch Tstg VISO *6 t=60sec, f=60Hz Note *1 Tch=150°C Note *2 Starting Tch=25°C, IAS=1.8A, L=119mH, VCC=45V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. < Note *4 IF -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=450V VGS=0V VDS=360V VGS=0V VGS=±30V VDS=0V ID=2.1A VGS=10V ID=2.1A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=2.1A VGS=10V RGS=10 Ω V CC=225V ID=4.3A VGS=10V IF=4.3A VGS=0V Tch=25°C IF=4.3A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 1.30 3.5 330 50 2 11 5.5 23 5.0 13.0 6.0 2.5 1.00 280 1.6 450 3.0 V V µA mA nA Ω S pF 5.0 25 2.0 100 1.60 500 75 4 17.5 8.5 34.5 8.0 20 9.0 3.8 1.50 1.8 ns nC V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 5.952 58.0 Units °C/W °C/W 1 2SK3917-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 30 9 8 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C 20V 10V 8.0V 25 7 20 6 7.0V ID [A] PD [W] 5 4 6.5V 15 10 3 2 6.0V 5 1 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 14 16 18 20 22 Tc [°C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 10 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 10 ID[A] gfs [S] 1 0.1 0.01 1 0.1 0.01 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0.1 1 10 VGS[V] ID [A] 4.5 4.0 3.5 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C VGS= 5.5V 6.0V 5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=2.1A,VGS=10V 6.5V 7.0V 4 RDS(on) [ Ω ] 8V 10V 20V RDS(on) [ Ω ] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 3 max. 2 typ. 1 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 2 2SK3917-01MR FUJI POWER MOSFET 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 20 18 16 Typical Gate Charge Characteristics VGS=f(Qg):ID=4.3A,Tch=25°C VGS(th) [V] 5.0 4.5 max. 14 Vcc= 90V 12 225V 360V VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. 10 8 6 4 2 0 0 5 10 15 20 25 30 Tch [°C] Qg [nC] 1n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C 100p 10 C [F] 10p IF [A] 1 3 Coss 1p Crss 100f -1 10 10 0 10 1 10 2 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω 300 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V tf 10 2 250 IAS=1.8A td(off) 200 EAS [mJ] t [ns] td(on) 10 1 150 IAS=2.6A 100 tr IAS=4.3A 50 10 0 0 10 -1 10 0 10 1 0 25 50 75 100 125 150 ID [A] starting Tch [°C] 3 2SK3917-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=45V Avalanche Current I AV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 2 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 1 Zth(ch-c) [ C/W] o 10 0 10 -1 10 -2 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4