6MBI225V-120-50

http://www.fujisemi.com 6MBI225V-120-50 IGBT MODULE (V series) 1200V / 225A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Inverter Symbols VCES VGES Ic Icp -Ic -Ic pulse Pc Tj Top Tstg Conditions Maximum ratings 1200 ±20 225 450 225 450 1070 175 150 -40 to +125 2500 3.5 4.5 Units V V Collector current Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C A Collector power dissipation Junction temperature Operation temperature Storage temperature Isolation voltage Screw torque W °C between terminal and copper base (*1) Viso between thermistor and others (*2) Mounting (*3) Terminals (*4) - AC : 1min. VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6) 1 6MBI225V-120-50 Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols ICES IGES VGE (th) VCE (sat) (terminal) Collector-Emitter saturation voltage VCE (sat) (chip) Inverter Input capacitance Turn-on time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time Thermistor Resistance B value trr R B VGE = 0V IF = 225A IF = 225A T = 25°C T = 100°C T = 25 / 50°C Conditions VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, IC = 225mA Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C IC = 225A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V IC = 225A VCC = 600V IC = 225A VGE = +15V RG = 1.6Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C IGBT Modules http://www.fujisemi.com Turn-off time VGE = 0V IF = 225A Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.20 2.65 2.55 2.60 1.85 2.30 2.20 2.25 18 550 1200 180 600 120 1050 2000 110 350 2.05 2.50 2.20 2.15 1.70 2.15 1.85 1.80 200 600 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs Ω K Thermal resistance characteristics Items Thermal resistance (1device)(*5) Contact thermal resistance (1device) (*6) Symbols Rth(j-c) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Characteristics min. typ. max. 0.14 0.19 0.0167 Units °C/W Note *5: This value is including margins. This will be revised in future. Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] 2 6MBI225V-120-50 Characteristics (Representative) [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 15V 400 Collector current: Ic [A] Vge=20V Collector current: Ic [A] 12V 300 400 Vge= 20V IGBT Modules http://www.fujisemi.com [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 500 15V 12V 300 200 10V 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage: Vce [V] 200 10V 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage: Vce [V] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Vge= 15V / chip 500 Collector-Emitter Voltage: Vce [V] 125°C 400 Collector Current: Ic [A] Tj=25°C 150°C 200 [INVERTER] Collector-Emitter voltage vs. Gate-Emitter v oltage (typ.) Tj= 25°C / chip 10 8 300 6 4 Ic=450A Ic=225A Ic=112A 5 10 15 20 25 100 2 0 0 1 2 3 4 5 Collector-Emitter Voltage: Vce [V] 0 Gate-Emitter Voltage: Vge [V] [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) Vge= 0V, ƒ= 1MHz, Tj= 25°C Gate Capacitance: Cies, Coes, Cres [nF] *** 100 Collector-Emitter voltage: Vce [200V/div] Gate-Emitter voltage: Vge [5V/div] [INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=225A, Tj= 25°C Cies 10 Vge Coes 1 Cres Vce 0.1 0 10 20 30 0 500 1000 1500 2000 Collector-Emitter voltage: Vce [V] Gate charge: Qg [nC] 3 6MBI225V-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=25°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=125°C, 15 0°C 10000 Tj=125oC Tj=150oC 1000 toff ton tr 100 tf 1000 toff ton tr 100 tf 10 0 100 200 300 400 500 10 0 100 200 300 400 500 Collector current: Ic [A] Collector current: Ic [A] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=225A, Vge=±15V, Tj=25°C Switching loss: Eon, Eoff, Err [mJ/pulse] 10000 Switching time: ton, tr, toff, tf [nsec] [INVERTER] Switching loss vs. Collector current (typ.) Vcc=600, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C 80 Tj=125oC Tj=150oC 60 Eoff 1000 toff ton tr 40 Err 20 Eon 0 0 100 200 300 400 500 100 tf 10 0.1 1 10 100 Gate resistance: Rg [Ω] Collector current: Ic [A] [INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse] 150 Tj=125oC Tj=150oC 100 Eon Collector current: Ic [A] 600 [INVERTER] Reverse bias safe operating area (max.) +Vge=15V, -Vge≤15V, Rg≥1.6Ω, Tj=150°C 800 400 Eoff 50 200 Err 0 0 1 10 100 0 0 500 1000 1500 Gate resistance: Rg [Ω] Collector-Emitter voltage: Vce [V] 4 6MBI225V-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] Forward Current vs. Forward Voltage (typ.) chip 500 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=25°C 10000 400 Forward current: If [A] Tj=25°C 1000 Irr 300 200 125°C 100 150°C 0 0 1 2 3 Forward on voltage: Vf [V] 100 trr 10 0 100 200 300 400 500 Forward current: If [A] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C 10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Tj=125oC Tj=150oC 1000 Irr trr 100 Thermal resistanse: Rth(j-c) [°C/W] *** Transient Thermal Resistance (max.) 1 FWD 0.1 IGBT 0.01 10 0 100 200 300 400 500 Forward current: If [A] 0.001 0.001 0.01 0.1 1 Pulse Width : Pw [sec] [THERMISTOR] Temperature characteristic (typ.) 100 Resistance : R [kΩ] 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temperature [°C] 5 6MBI225V-120-50 Outline Drawings, mm IGBT Modules http://www.fujisemi.com WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. 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