6MBI75VA-120-50

6MBI75VA-120-50 IGBT MODULE (V series) 1200V / 75A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Maximum ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current Symbols VCES VGES Ic Icp -Ic -Ic pulse Pc Tj Tjop Tc Tstg AC : 1min. M5 Conditions Maximum ratings 1200 ±20 75 150 75 150 385 175 150 125 -40 to +125 2500 3.5 VAC Nm Units V V A W Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Collector power dissipation Junction temperature Operating junciton temperature (under switching conditions) Case temperature Storage temperature Isolation voltage Screw torque °C between terminal and copper base (*1) Viso between thermistor and others (*2) Mounting (*3) - Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 6MBI75VA-120-50 Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols I CES I GES VGE (th) VCE (sat) (terminal) Collector-Emitter saturation voltage VCE (sat) (chip) Inverter Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time Thermistor Resistance B value trr R B I F = 75A I F = ±20 T = 25°C T = 100°C T = 25 / 50°C Conditions VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, I C = 75mA Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C I C = 75A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V I C = 75A VCC = 600V I C = 75A VGE = +15 / -15V RG = 2.2Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C IGBT Modules I F = 75A Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.25 2.70 2.60 2.65 1.85 2.30 2.20 2.25 6.0 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.10 2.55 2.25 2.20 1.70 2.15 1.85 1.80 0.1 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs Ω K Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) (*4) Symbols Rth(j-c) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Characteristics min. typ. max. 0.39 0.55 0.05 Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Inverter ] 25,2 6 15,1 6 [ Thermistor ] 17 18 1 2 U 23,2 4 5 6 V 21,2 2 9 10 W 19,2 0 3 4 27,2 8 7 8 11 12 13,1 4 2 6MBI75VA-120-50 Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 150 VGE=20V 15V 12V 150 IGBT Modules [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150oC / chip VGE=20V 15V 12V 100 10V Collector current: IC [A] 100 10V 50 Collector current: IC [A] 50 8V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 150 Tj=150° C Collector-Emitter voltage: VCE[V] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8 125°C 100 Collector - Emitter voltage: VCE [V] Tj=25°C Collector current: IC [A] 6 4 50 2 Ic=150A Ic=75A Ic= 38A 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage: VCE[V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25oC Capacitance: Cies, Coes, Cres [nF] 100.0 Gate - Emitter voltage: VGE [V] [ Inverter ] Dynamic gate charge (typ.) Vcc=600V， Ic=75A，Tj= 25°C Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.0 Cies VGE 1. 0 Cres Coes 0. 1 0 10 20 30 40 VCE 0 250 500 750 Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC] 3 6MBI75VA-120-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V，VGE=±15V，Rg=2.2Ω，Tj= 125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V，VGE=±15V，Rg=2.2Ω，Tj= 150°C 10000 1000 t of f ton tr tf 1000 t of f ton tr tf 100 100 10 0 50 100 150 200 10 0 50 Collector current: IC [A] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V，Ic=75A，VGE=±15V，Tj= 125°C Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10000 20 Collector current: IC [A] 100 150 200 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V，VGE=±15V，Rg=2.2Ω Eon(150°C) Eon(125°C) 15 Eoff(150°C) Eoff(125°C) Err(150°C) Err(125°C) 1000 t of f ton tr 10 100 tf 5 10 0. 1 1. 0 10.0 100.0 0 0 25 50 75 100 125 150 175 Gate resistance : Rg [Ω] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V，Ic=75A，VGE=±15V Switching loss : Eon, Eoff, Err [mJ/pulse] 20 Collector current: IC [A] [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE = 2.2Ω ,Tj