6MBP150TEA060

6MBP150TEA060 Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit 600V / 150A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) V SC VCES IC ICP -IC PC V CC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Rating Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 450 500 400 600 150 300 150 431 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W V V mA V mA °C °C °C °C V N·m DC 1ms Duty=68.2% *2 Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Collector-Emitter voltage *1 Collector current Inverter Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.47/(150 x 2.6) x 100=68.2% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.29=431W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 10±1sec. 6 MBP150TEA060 Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ton toff trr PAV Condition Min. Typ. 1.8 1.6 - IGBT-IPM Max. 1.0 2.3 2.6 3.6 0.3 - Unit mA V V µs Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) VCE=600V Vin terminal open. Ic=150A Terminal Chip -Ic=150A Terminal Chip VDC=300V,Tj=125°C 1.2 IC=150A Fig.1, Fig.6 VDC=300V, IC=150A Fig.1, Fig.6 Internal wiring inductance=50nH 170 Main circuit wiring inductace=54nH Inverter mJ Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Current limit resistor RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH V UV VH Condition Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Min. 225 150 11.0 0.2 Typ. 5 20 0.5 Max. -8 -12.5 Unit A µs µs °C °C V V Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *10 Case to fin thermal resistance with compound *10 : (For 1 device, Case is under the device) Inverter IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.29 0.47 Unit °C/W °C/W - °C/W Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating Min. ±2.0 ±5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol V DC V CC Min. 13.5 2.5 Typ. 15.0 Max. 400 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 270 Max. Unit g 6 MBP150TEA060 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic I ALM Ic I ALM Ic I ALM Figure.4 Definition of tsc Vcc 20 k DC 15V P P IPM IPM L + + DC 300V Vin HCPL 4504 VccU DC 15V SW1 20k P IPM U CT GND N Ic VinU GNDU AC200V Figure 6. Switching Characteristics Test Circuit V DC 15V SW2 20k + Vcc VinX GND W 4700p Icc A Noise Vcc P IPM Vin U V W GND N N DC 15V Earth Cooling Fin P.G +8V fsw Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 6 MBP150TEA060 Block diagram P VccU VinU AL MU GNDU Vcc V VinV AL MV GNDV VccW VinW AL MW GNDW Vcc VinX 4 3 2 IGBT-IPM Pre- Driver R ALM 1.5k 1 Vz U 8 7 6 Pre- Driver R ALM 1.5k 5 Vz V 12 11 10 Pre- Driver R ALM 1.5k 9 Vz W 14 16 Pre- Driver Vz GND 13 VinY 17 Pre- Driver Vz Pre-drivers include following functions 1.Amplifier for driver Pre- Driver VinZ 18 2.Short circuit protection 3.Under voltage lockout circuit B Vz 4.Over current protection 5.IGBT chip over heating protection VinDB AL M 15 19 R ALM 1.5k N Outline drawings, mm M BCFM Mass : 270g 6MBP150TEA060 Characteristics Control circuit characteristics (Respresentative) IGBT-IPM P ower sup ply current vs. Switching frequency Tc=1 25°C 70 Pow er su p pl y c u rre nt : Icc (mA) 60 50 40 30 20 10 0 0 5 10 15 20 Switch ing frequency : fs w (k Hz) 25 V cc= 17V V cc= 15V V cc= 13V Input signal thresh old voltage vs. P ower sup ply voltag e 2 .5 Inp u t sig na l thres hold voltag e : Vin (on ),Vin (o ff) (V) Tj=25°C Tj= 12 5°C P-sid e N-sid e V cc=17V V cc= 15V V cc=13V 2 } Vin(off) 1 .5 } Vin(on) 1 0 .5 0 12 13 14 15 16 17 Power su p p ly voltag e : Vcc (V) 18 Under voltage vs. Junction temp erature 14 12 Un d er voltag e : VUVT (V) 10 8 6 4 2 0 20 Un de r volta ge h ys teris is : VH (V) 40 60 80 100 12 0 140 Un d er voltag e h ysterisis vs. Jn ction tem p erature 1 0 .8 0 .6 0 .4 0 .2 0 20 Ju nc tion te m pe ra tu re : Tj (°C) 40 60 80 100 12 0 Ju nc tion te m pe ra tu re : Tj (°C) 140 Alarm hold tim e vs. P ower sup ply voltag e 3 O ver heatin g p rotection : TjO H (°C) OH hy ste risis : Tj H (°C) Alarm hold time : tALM (m Se c) 2 .5 Tc= 10 0° C 2 Tc=25°C 1 .5 1 0 .5 0 12 13 14 15 16 17 18 Power su p p ly voltag e : Vcc (V) 20 0 Over heatin g characteristics TjOH,TjH vs. Vcc TjO H 15 0 10 0 50 TjH 0 12 13 14 15 16 17 18 Power su pp ly voltag e : Vcc (V) 6MBP150TEA060 Main circuit characteristics (Respresentative) IGBT-IPM Collector current vs. Collector-Em itter voltage Tj=25°C(Chip) 20 0 Collector current vs. Collector-Em itter voltage Tj=25°C(Term inal) 20 0 Coll ec to r Cu rre nt : Ic (A) Collector Cu rre nt : Ic (A) Vc c= 15V Vc c= 15V V cc=17V V c c= 13V 15 0 V cc= 17V V cc= 13V 15 0 10 0 10 0 50 50 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) Collector current vs. Collector-Em itter voltage Tj=125 °C(Chip) 20 0 Collector current vs. Collector-Em itter voltage Tj=125 °C(Term inal) 20 0 Collector Cu rre nt : Ic (A) V c c= 15V Collector Cu rre nt : Ic (A) V cc=15V 15 0 V cc=17V Vc c= 13V 15 0 Vc c= 17V V cc=13V 10 0 10 0 50 50 0 0 0.5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) Forward current vs. Forward voltage (Chip) 30 0 25 0 Forward Cu rrent : If (A) 12 5° C 20 0 15 0 10 0 50 0 0 0.5 1 1.5 2 2 .5 Fo rw ard vol ta ge : Vf (V) 2 5°C Fo rw ard Cu rren t : If (A) 30 0 25 0 Forward current vs. Forward voltag e (Term inal) 12 5°C 20 0 15 0 10 0 50 0 0 0.5 1 1.5 2 2 5°C 2 .5 Fo rw ard vol ta ge : Vf (V) 6 MBP150TEA060 IGBT-IPM Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e) 12 10 8 6 4 2 0 0 40 80 12 0 160 Eo ff Eo n Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e) Switching Loss vs. Collector Current Edc=30 0V,Vcc=15 V,Tj=25°C Switching Loss vs. Collector Current Edc=300V,V cc=15V,Tj=1 25°C 12 Eo n 10 8 6 Eo ff 4 2 0 0 40 80 12 0 160 E rr E rr Collec tor cu rren t : Ic (A) Collec tor cu rren t : Ic (A) Reversed b iased safe operating area Vcc=15V,Tj ≦ 25°C 1 Th ermal res is ta nc e : R th (j-c) (°C /W ) 40 0 Transient therm al resistance 1 FWD Col lector cu rren t : Ic (A) 30 0 IGB T 0 .1 20 0 RBS OA(Rep etitive pu lse) 10 0 0 0 100 200 300 400 500 600 700 0.01 0.00 1 0.0 1 0 .1 1 Collector-Em itter voltag e : Vce (V) Pu lse width :Pw (sec) Power d eratin g for IG BT (per device) 50 0 Co lle cter Power D issip ation : P c (W ) Colle cter Power D issip ation : P c (W ) 30 0 25 0 20 0 15 0 10 0 50 0 0 20 40 60 80 100 12 0 140 16 0 0 20 Power derating for FW D (per device) 40 0 30 0 20 0 10 0 0 Case Tem p eratu re : Tc (°C) 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (°C) 6MBP150TEA060 IGBT-IPM Switching tim e vs. Collector current Edc=30 0V,Vcc=15 V,Tj=25°C 10 00 0 Switch in g tim e : ton ,toff,tf (n Sec) to n to ff 10 000 Switch in g tim e : ton ,toff,tf (n Sec) Switching tim e vs. Collector current Edc=300 V,V cc=15V,Tj=1 25°C to n to ff 1 000 1 00 0 10 0 tf 100 tf 10 0 50 10 0 15 0 20 0 Col lector cu rren t : Ic (A) 250 10 0 50 10 0 15 0 20 0 250 Col lector cu rren t : Ic (A) Reverse recovery characteristics trr,Irr vs.IF trr12 5°C R eve rse rec overy cu rre n t:Irr(A) Reverse re covery time:trr(n sec) 10 0 trr2 5° C Irr12 5°C Irr2 5° C 10 1 0 50 10 0 15 0 20 0 250 Fo rw ard cu rren t:IF(A)