7MBI100N-060

IGBT MODULE ( N series ) n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( ~ 3 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1 Terminal Screw Torque *1 Symbols VCES VGES IC IC PULSE -IC PULSE PC VCES VCES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO Test Conditions Ratings 600 ± 20 100 200 150 400 600 ± 20 50 100 200 600 1 50 +150 -40 ∼ +125 2500 3.5 3.5 Units V A W V A W V A °C V Nm Continuous 1ms Continuous 1 device Continuous 1ms 1 device 10ms A.C. 1min. Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time Symbols ICES IGES VGE(th) VCE(sat) Cies ton toff tf VF trr ICES IGES VCE(sat) ton toff tf IRRM trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=100mA VGE=15V IC=100A f=1MHz, VGE=0V, VCE=10V VCC=300V IC =100A VGE= ±15V RG = 24Ω IF=100A VGE=0V -di A IF=100A; VGE=-10V; /dt=300 /µs VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=15V IC=50A VCC=300V IC = 50A VGE= ±15V RG = 51Ω VR=600V Min. Max. 3.0 15 4.5 7.5 2.8 6600 (typ.) 1.2 1.5 0.35 3.3 300 1.0 100 2.8 1.2 1.5 0.35 1.0 600 Units mA µA V pF µs V ns mA nA V µs mA ns n Thermal Characteristics Items Thermal Resistance (1 device) Contact Thermal Resistance Symbols Rth(j-c) Rth(c-f) Test Conditions Inverter IGBT Inverter FRD Brake IGBT With Thermal Compound Min. Max. 0.31 0.90 0.63 0.05 (typ.) Units °C/W Collector current vs. Collector-Emitter voltage T j=25°C 250 V GE=20V,15V,12V 200 200 C Collector current vs. Collector-Emitter voltage T j=125°C 250 V GE=20V,15V, 12V [A] Collector current : I C 150 Collector current : I [A] 10V 150 10V 100 100 50 8V 0 0 1 2 3 4 5 6 Collector-Emitter voltage : V CE [ V] 50 8V 0 0 1 2 3 4 5 6 Collector-Emitter voltage : V CE [ V] Collector-Emitter vs. Gate-Emitter voltage T j=25°C 10 10 CE Collector-Emitter vs. Gate-Emitter voltage T j=125°C [V] CE 8 [V] 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 200A 100A 50A 4 IC= 200A 100A 2 2 50A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] Switching time vs. Collector current V CC =300V, R G =24 Ω , V GE =±15V, Tj=25°C 1000 1000 Switching time vs. Collector current V CC =300V, R G =24 Ω , V GE =±15V, Tj=125°C , t r , t off , t f [nsec] , t r , t off , t f [nsec] t on t off tr tf 100 t off t on tr tf on on Switching time : t 10 0 50 100 150 Collector current : I C [ A] Switching time : t 100 10 0 50 100 150 Collector current : I C [ A] Switching time vs. R G V CC =300V, I C=100A, V GE =±15V, Tj=25°C 500 Dynamic input characteristics T j=25°C 25 V CC =200V , t r , t off , t f [nsec] 1000 CE t on t off [V] 300V 400 400V 20 tr tf 100 Collector-Emitter voltage : V 300 15 Switching time : t on 200 10 100 5 10 10 Gate resistance : R G [ Ω ] 100 0 0 100 200 300 400 500 0 600 Gate charge : Q G [ nC] Forward current vs. Forward voltage V GE =OV 250 T j=125°C 25°C Reverse recovery characteristics t rr , I rr v s. I F t rr 1 25°C rr [nsec] [A] rr [A] 200 F 100 I rr 1 25°C t rr 2 5°C I rr 2 5°C Reverse recovery current : I Forward current : I 150 100 50 0 0 1 2 Forward voltage : V F [ V] 3 4 Reverse recovery time 10 0 50 100 :t 150 Forward current : I F [ A] Reversed biased safe operating area Transient thermal resistance 1000 1 Diode 800 +V GE =15V, -V GE< 15V, T j< 125°C, R G > 24 Ω [°C/W] Brake IGBT IGBT C th(j-c) [A] Collector current : I 600 SCSOA (non-repetitive pulse) Thermal resistance : R 0,1 400 200 RBSOA (Repetitive pulse) 0,01 0 ,001 0 0,01 0,1 1 0 100 200 300 400 500 600 Pulse width : PW [sec] Collector-Emitter voltage : V CE [ V] Switching loss vs. Collector current V CC =300V, R G =24 Ω , V GE =±15V 10 Capacitance vs. Collector-Emitter voltage T j=25°C , E off , E rr [mJ/cycle] , C oes , C res [nF] E off 1 25°C 8 10 C ies 6 E off 2 5°C on Switching loss : E 4 Capacitance : C E on 1 25°C E on 2 5°C ies 1 C oes C res 2 E rr 1 25°C E rr 2 5°C 0 50 100 150 200 C ollector Current : I C [ A] 0 0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [ V] Brake Chopper IGBT Collector current vs. Collector-Emitter voltage T j =25°C 125 V GE =20V,15V,12V 100 [A] C C Collector current vs. Collector-Emitter voltage T j =125°C 125 V GE =20V,15V, 12V 100 [A] Collector current : I Collector current : I 75 10V 75 10V 50 50 25 8V 0 0 1 2 3 4 5 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] Collector-Emitter voltage : V CE [ V] Collector-Emitter vs. Gate-Emitter voltage T j =25°C 10 [V] CE CE Collector-Emitter vs. Gate-Emitter voltage T j =125°C 10 [V] 8 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 100A 50A 25A 4 IC= 100A 50A 25A 2 2 0 0 5 10 15 20 25 Gate-Emitter voltage : V G E [ V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V G E [ V] Switching time vs. Collector current V CC =300V, R G =51 Ω , V GE ±15V, Tj =25°C 1000 , t r , t off , t f [nsec] , t r , t off , t f [nsec] t on t off tr tf 100 1000 Switching time vs. Collector current V CC =300V, R G =51 Ω , V GE =±15V, Tj =125°C t off t on tr tf on on 100 Switching time : t Switching time : t 0 20 40 60 80 10 0 10 Collector current : I C [ A] 20 40 60 80 Collector current : I C [ A] Brake Chopper IGBT Switching time vs. R G V CC =300V, I C =50A, V GE =±15V, Tj =25°C 500 , t r , t off , t f [nsec] t on t off tr tf 100 V CC =200V 400 300V 20 400V Collector-Emitter voltage : V 300 15 Dynamic input characteristics T j =25°C 25 1000 Switching time : t on CE [V] 200 10 100 5 10 10 Gate resistance : R G [ Ω ] 0 100 0 50 100 150 200 250 0 300 Gate charge : Q G [ nC] Reversed biased safe operating area +V GE =15V, -V GE < 15V, T j < 125°C, R G > 51 Ω 500 , E off , E rr [mJ/cycle] 6 Switching loss vs. Collector current V CC =300V, R G =51 Ω , V GE =±15V 400 [A] C 5 E off 1 25°C 4 Collector current : I 300 SCSOA (non-repetitive pulse) Switching loss : E 200 on 3 E off 2 5°C E on 1 25°C E on 2 5°C 2 100 RBSOA (Repetitive pulse) 0 0 100 200 300 400 500 600 Collector-Emitter voltage : V C E [ V] 1 E rr 1 25°C E rr 2 5°C 0 20 40 60 [ A] 80 Collector Current : I C 0 Capacitance vs. Collector-Emitter voltage T j =25°C , C oes , C res [nF] 10 C ies ies Capacitance : C 1 C oes C res 0,1 0 5 10 15 20 25 30 Collector-Emitter Voltage : V C E [ V] 35 Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Dallas, TX 75370 Phone - (972) 733-1700 381-9991 www.collmer.com P.O. Box 702708 - Box 702708 - Dallas, TX (972) 233-1589 Fax (972) 233-0481 -(fax)