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ESAC83-004

ESAC83-004

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    ESAC83-004 - SCHOTTKY BARRIER DIODE - Fuji Electric

  • 数据手册
  • 价格&库存
ESAC83-004 数据手册
ESAC83-004 (20A) SCHOTTKY BARRIER DIODE 15.5 Max. 5.0±0.1 (40V / 20A ) Outline drawings, mm 4.5±0.2 2.0 7.2±0.1 13.0 10.0 Ø3.2±0.1 15±0.2 1 2 3 3.0±0.2 2.2 1.6 1.6 1.1 5.45 5.45 14.5±0.2 1.5 19.5±0.2 0.5 1.5 Features Low VF Super high speed switching High reliability by planer design JEDEC EIAJ SC-65 Connection diagram Applications High speed power switching 1 2 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Symbol VRRM VRSM Io Non-repetitive peak reverse voltage Average output current Surge current 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 No Tj Tstg IFSM Sine wave 10ms 保led befor new u Conditions e 廃soletdesign. 守 ob Rating 40 48 20* 120 -40 to +150 -40 to +150 予n marc 止o 0 機種7. 20 定h 3 Unit V V A A °C °C tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=119°C Operating junction temperature Storage temperature * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=8A VR=VRRM Junction to case Max. 0.55 15 1.5 Unit V mA °C/W (40V / 20A ) Characteristics Forward Characteristic 100 ESAC83-004 (20A) (typ.) Reverse Characteristic (typ.) 10 2 Tj=150 C o 10 Tj=125 C o (mA) 10 1 o Tj=100 C Reverse Current (A) Tj=150 1 Tj=125 Tj=100 Tj=25 o o o C C C 10 0 Forward Current o C 10 -1 Tj= 25 C o IR 10 -2 0.1 IF 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 10 20 30 40 50 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 14 Io Reverse Power Dissipation 11 10 360° VR 12 (W) λ 360° (W) 9 8 Forward Power Dissipation 10 Reverse Power Dissipation α 7 6 5 4 3 2 1 0 8 Square wave λ =60 o o Square wave λ =120 Sine wave λ =180 6 Square wave λ =180 4 2 0 0 2h Io 3月 7年 00 2 4 6 8 T . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu ot r N is p o o DC WF 守廃 保 PR 0 5 10 予n marc 止o 15 20 25 30 35 40 0 機種7. 20 定h DC α =180 o Per 1element 10 45 Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) 10000 Junction Capacitance Characteristic (typ.) 160 150 C) o 130 Case Temperature 120 Sine wave λ =180 o o Junction Capacitance Cj 30 DC ( (pF) Square wave λ=180 1000 Square wave λ=120 o 140 110 100 360° λ Io Tc Square wave λ=60 90 VR=30V o 80 0 5 10 15 20 25 100 1 10 100 Io Average Output Current (A) VR Reverse Voltage (V) λ :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (40V / 20A ) Surge Capability 1000 ESAC83-004 (20A) Peak Half - Wave Current I FSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 1 Transient Thermal Impedance 10 0 10 -1 10 -2 10 -3 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 10 -2 保led befor new u 10 1 e 廃soletdesign. 守 ob 10 2 予n marc 止o 0 機種7. 20 定h ( o C/W ) 10 -1 10 0 t Time (sec.) No
ESAC83-004 价格&库存

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