FMH23N60E

FMH23N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3P(Q) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 6 00 6 00 ± 23 ± 92 ± 30 23 1033.1 40 7.5 100 2.50 400 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =11.5A, VGS =10V I D =11.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =11.5A RGS = 5.1Ω Vcc =300V I D =23A VGS =10V L=1.56mH, Tch =25°C I F =23A, VGS =0V, Tch =25°C I F =23A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 6 00 2.5 14 23 typ. 3.0 10 0.24 28 4400 380 30 26 12 144 22 130 30 40 0.90 0.92 14 max. 3.5 25 250 100 0.28 6600 570 45 39 18 216 33 195 45 60 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to c ase Channel to ambient min. typ. max. 0.313 50.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =10A, L=18.9mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=7.5kV/µs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMH23N60E Allowable Power Dissipation PD=f(Tc) 10 400 10 300 PD [ W ] 0 1 2 FUJI POWER MOSFET 500 Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25°C t= 1µs 10µs 100µs 200 ID [A] 10 1m s 100 10 -1 P o w e r l o s s w a v e fo r m : S q u a r e w a v e fo r m PD tt D.C. 0 0 25 50 75 Tc [° C] 100 125 150 10 -2 10 0 10 1 VDS [V] 10 2 10 3 60 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 10 V 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 50 6 .0 V 5 .5 V 10 40 I D [ A] ID[A] 30 5 .0 V 20 1 10 VGS=4.5V 0.1 0 0 4 8 12 VDS [V] 16 20 24 2 3 4 VGS[V] 5 6 7 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.7 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.5V 5V 0.6 10 RDS(on) [ Ω ] 0.5 gf s [ S] 0.4 5.5V 6V 10V 1 0.3 0.2 0.1 0.1 1 ID [A] 10 100 0.1 0 10 20 30 ID [A] 40 50 60 2 FMH23N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V FUJI POWER MOSFET 1.0 6 Gate T hreshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250 µA 0.8 5 4 RDS(on) [ Ω ] VGS(th) [V] 0.6 m ax. 3 typ. min. 2 0.4 max. typ. 0.2 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 Tch [ ° C ] 75 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=23A,Tch=25 °C 14 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 12 10 Vcc= 120V 300V 480V 10 3 8 VG S [ V] C [pF] 10 2 Coss 6 4 10 1 Crss 2 0 0 20 40 60 80 100 Qg [nC] 120 140 160 180 200 10 0 10 -1 10 0 10 1 10 2 10 3 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=5.1Ω td(off) 10 10 2 tf I F [ A] 1 t [ns] td(on) 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 ID [A] 1 10 2 3 FMH23N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)