FMI16N60E

FMI16N60E Features FUJI POWER MOSFET Super FAP-E3 series Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability T-Pack(L) N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 6 00 6 00 ±16 ± 64 ± 30 16 554.8 27 5.2 100 2.16 270 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =8A, VGS =10V I D =8A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =8A RGS =10Ω Vcc =300V I D =16A VGS =10V L=1.74mH, Tch =25°C I F =16A, VGS =0V, Tch =25°C I F =16A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 6 00 2.5 10 16 typ. 3.0 10 0.40 20 2650 230 17 22 10 120 20 76 17 22 0.90 0.7 9 max. 3.5 25 250 100 0.47 3980 345 25.5 33 15 180 30 114 25.5 33 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to case Channel to ambient min. typ. max. 0.460 62.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =7A, L=20.8mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=5.2kV/µs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMI16N60E Allowable Power Dissipation PD=f(Tc) 10 2 FUJI POWER MOSFET 4 00 Safe Operat ing Area ID=f(VDS):Duty=0 (Singl e p uls e),Tc =25°C t= 1µs 10µs 10 1 3 00 100µs PD [ W ] 2 00 ID [A] 10 0 1m s 1 00 10 -1 Po w er l o s s wa v e fo r m : Squ ar e w av e fo r m PD tt D.C. 0 0 0 25 50 75 T c [ °C ] 10 0 12 5 15 0 10 -2 10 -1 10 10 V DS [V] 1 10 2 10 3 40 Typical Output Characteristics ID= f(VDS):80 µs pulse test,Tch=25 ° C 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 ° C 30 10 ID [A] 20 ID[A] 1 10 0.1 0 0 4 8 12 VDS [V] 16 20 24 2 3 4 VGS[V] 5 6 7 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 ° C 0.8 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 ° C VGS=4.5V 5V 0.7 10 RDS( on ) [ Ω ] 0.6 5.5V 6V 10V g fs [S] 0.5 1 0.4 0 .1 0.1 1 ID [A] 10 100 0.3 0 5 10 15 ID [A] 20 25 30 2 FMI16N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID= 8A,VGS=10V 6 FUJI POWER MOSFET 1.4 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 1.2 5 1.0 4 RDS( on ) [ Ω ] VGS (th) [V] 0.8 m ax. 3 typ. mi n. 2 0.6 m ax. typ. 0.4 0.2 1 0.0 -50 - 25 0 25 50 Tch [° C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 °C 14 10 Vcc= 120V 300V 480V 4 Typical Capacitance C=f(VDS):VGS=0V,f= 1MHz 12 Ciss 10 3 10 VGS [V] C [pF ] 8 10 2 6 Co s s 4 10 1 Crss 2 0 0 20 40 60 Qg [nC] 80 100 120 10 0 10 -1 10 0 10 1 10 2 10 3 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 ° C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω td( off) 10 10 2 tf IF [A] t [n s] td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 ID [A] 10 1 10 2 3 FMI16N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)