FMP11N60E

FMP11N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 600 600 ±11 ± 44 ± 30 11 384 18.0 4.9 100 2.02 180 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =5.5A, VGS =10V I D =5.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =5.5A RG =15Ω Vcc =300V I D =11A VGS =10V L=2.64mH, Tch =25°C I F =11A, VGS =0V, Tch =25°C I F =11A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 600 2.5 6 11 typ. 3.0 10 0.64 12 1700 150 11 21 9.5 100 19 48.5 12.5 14 0.86 0.52 5.5 max. 3.5 25 250 100 0.75 2550 225 16.5 31.5 14.3 150 28.5 73 19 21 1.30 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.690 62.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =5A, L=28.2mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/μs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=4.4kV/μs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMP11N60E Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 200 180 160 140 120 PD [ W ] 10 2 Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1µs 10µs 100µs 10 1 I D [ A] 100 80 60 40 20 0 0 25 50 75 Tc [°C] 100 125 150 10 0 1m s 10 -1 P o w e r lo s s w a v e f o r m : S q u a r e w a v e fo r m PD t 10 -2 DC 0 10 -1 10 10 VDS [V] 1 10 2 10 3 20 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 10 1 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 15 10 0 I D [ A] ID[A] 10 10 -1 10 -2 5 10 -3 0 0 5 10 VDS [V] 15 20 10 -4 2 3 4 VGS[V] 5 6 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 1.3 1.2 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.0V 4.5V 5V 6V 10 1.1 1.0 0.9 0.8 0.7 0.6 10V 20V 1 0.1 RDS(on) [ Ω ] gf s [ S] 0.01 0.01 0.5 0.1 1 ID [A] 10 100 0 5 10 ID [A] 15 20 2 FMP11N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V FUJI POWER MOSFET 2.5 6 Gate T hreshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250 µA 2.0 5 RDS(on) [ Ω ] 1.5 VGS(th) [V] 4 m ax. 3 typ. max. 1.0 typ. 2 min. 0.5 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 20 18 16 14 12 VGS [V] Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25 °C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 4 Vcc= 120V 300V C [pF] Ciss 10 3 480V 10 8 6 4 2 0 0 10 20 30 40 Qg [nC] 50 60 70 80 10 2 Coss 10 1 Crss 10 0 10 -2 10 -1 10 VDS [V] 0 10 1 10 2 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω 10 10 2 td(off) tf IF [A] t [ns] 1 td(on) 10 1 0.1 tr 0.01 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 0 10 -1 10 0 10 1 10 2 3 FMP11N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)