FMP16N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Gate(G) Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 500 500 ±16 ±64 ±30 16 485 8 7.8 100 2.02 225 150 -55 to +150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V
Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µA, VGS =0V I D =250 µA, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ±30V, VDS =0V I D =8A, VGS =10V I D =8A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =8A RGS =10Ω Vcc =250V I D =16A VGS =10V L=1.52mH, Tch=25°C I F =16A, VGS =0V, Tch =25°C I F =16A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 2.5 8.5 16 typ. 3.0 10 0.33 17 2150 210 16 21 9 100 16 60 17 18 0.90 0.46 6.0 max. 3.5 25 250 100 0.38 3225 315 24 31.5 13.5 150 24 90 25.5 27 1.08 Unit V V µA nA Ω S pF
Tch =25°C Tch =125°C
ns
nC A V µs µC
Thermal Characteristics
Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.560 62.0 Unit °C/W °C/W
Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =7A, L=18.1mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc ≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=7.8kV/µs, Vcc ≤BVDSS, Tch≤150°C.
1
FMP16N50E
Allowable Power Dissipation PD=f(Tc)
Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
10
2
FUJI POWER MOSFET
300
t= 1µs 10µs
250 10 200
1
100µs
PD [W]
100 10 50
-1
ID [A]
150
10
0
1 ms
P o w e r l o s s w a v e fo r m : Squ a r e w a v e f o r m PD
t
D.C. 10
1
0 0 25 50 75 Tc [°C] 100 125 150
10
-2
10
0
VDS [V]
10
2
10
3
Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C
50
100
Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
40
10V 6.0V
10
ID [A]
20 5.0V 10 VGS=4.5V 0 0 4 8 12 VDS [V] 16 20 24
ID[A]
30
5.5V
1
0.1
0
1
2
3
4
5 VGS[V]
6
7
8
9
10
100
Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
1.0 0.9 0.8
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
VGS=4.5V 5V
5.5V
10
RDS(on) [ Ω ]
0.7 0.6 0.5 0.4 0.3 0.2 0.1 6V 10V
gfs [S]
1
0.1 0.1 1 ID [A] 10 100
0.0 0 5 10 15 20 ID [A] 25 30 35 40
2
FMP16N50E
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V
FUJI POWER MOSFET
1.2 1.1 1.0 0.9
6
Gate T hreshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250 µA
5
RDS(on) [ Ω ]
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 ma x . typ.
VGS(th) [V]
0.8
4 m ax. 3 typ. min. 2
1
0 -50 -25 0 25 50 75 Tch [°C] 100 125 150
Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 °C
14 10 Vcc= 100V 250V 400V
4
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
12
Ciss 10
3
10
VGS [V]
C [pF]
8
10
2
6
Coss
4
10
1
Crss
2
0 0 20 40 Qg [nC] 60 80 100
10
0
10
0
10 VDS [V]
1
10
2
10
3
100
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
td(off) 10 10
2
tf
IF [A]
t [ns]
td(on)
1
10
1
tr
0.1 0.00
10 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00
0
10
-1
10
0
10 ID [A]
1
10
2
3
FMP16N50E
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)
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