FMV06N90E

http://www.fujisemi.com FMV06N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 900 900 ±6 ±24 ±30 6 323.6 4.8 2.0 100 2.16 48 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C KVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t=60sec, f=60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Drain-Source Crossover Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q SW Q GD IAV VSD trr Qrr Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=900V, VGS=0V VDS=720V, VGS=0V VGS=±30V, VDS=0V I D =3A, VGS=10V I D =3.0A, VDS=25V VDS=25V VGS=0V f=1MHz Vcc =600V VGS=10V I D =3.0A RG=39Ω Vcc =450V I D =6A VGS=10V L=6.59mH, Tch=25°C I F=6A, VGS=0V, Tch=25°C I F=6A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 900 3.5 3.5 6 typ. 4.0 10 2.1 7.0 980 95 6.5 33 32 100 32 33 10 3.5 11 0.90 1.6 9.5 max. 4.5 25 250 100 2.5 1500 150 10 50 48 150 48 50 15 5.5 17 1.35 Unit V V µA nA Ω S pF Tch=25°C Tch=125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to case Channel to ambient min. typ. max. 0.862 50.0 Unit °C/W °C/W Note *1 : Tch≤150°C. Note *2 : Stating Tch=25°C, IAS=2.4A, L=103mH, Vcc=90V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=2.0kV/µs, Vcc≤BVDSS, Tch≤150°C. 1 FMV06N90E Allowable Power Dissipation PD=f(Tc) 10 FUJI POWER MOSFET http://www.fujisemi.com Safe Operating Area ID=f(VDS):Duty=0(Single pulse), Tc=25 °c 60 2 50 10 1 t= 1µs 10µs 40 PD [W] 100µs ID [A] 30 10 0 20 10 -1 1ms Powe r loss wave form : Square waveform PD t 10 0 0 25 50 75 Tc [°C] 100 125 150 10 -2 10 -1 10 0 10 1 10 2 10 3 VDS [V] Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25°C 8 20V 100 TypicalTransferCharacteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25°C 10V 7.0V 7 6 6.0V ID [A] 10 5 ID [A] 4 1 3 VGS=5.5V 2 1 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 1 2 3 4 5 VGS [V] 6 7 8 9 10 Typical Transconductance gfs=f(ID):80µs pulse test, VDS=25V, Tch=25°C 100 4.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25°C 3.6 VGS=5.5V 6V 10 gfs [S] RDS(on) [ Ω ] 3.2 2.8 7V 10V 20V 1 2.4 2.0 0.1 0.1 1 ID [A] 10 100 1.6 0 1 2 3 4 ID [A] 5 6 7 8 2 FMV06N90E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3.0A, VGS=10V 8 8 FUJI POWER MOSFET http://www.fujisemi.com Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA 7 7 6 RDS(on) [Ω] VGS(th) [V] 6 5 5 max. typ. 4 max. typ. 4 3 3 min. 2 2 1 1 0 -50 -25 0 25 50 T ch [°C] 75 100 125 15 0 0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 14 Typical Gate Charg e Characteristics VGS=f(Qg):ID=6A,Tch=25 °C 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 10 3 Ciss 10 Vcc= 120V 450V C [pF] VGS [V] 8 720V 10 2 6 Coss 4 10 1 2 Crss 10 0 0 0 10 20 Qg [nC] 30 40 50 10 -2 10 -1 10 VDS [V] 0 10 1 10 2 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V, VGS=10V, RG=39 Ω 10 2 tf td(off) 10 IF [A] t [ns] 1 td(on) tr 10 1 0.1 0.01 0.00 10 0 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 -1 10 0 10 ID [A] 1 10 2 3 FMV06N90E Maximum Avalanche Energy vs. starting Tch E(AV)=f(startingTch):Vcc=90V, I(AV)