FMV19N60E

FMV19N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 6 00 6 00 ±19 ±76 ± 30 19 799 13 6.5 100 2.16 130 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =9.5A, VGS =10V I D =9.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =9.5A RGS = 8.2Ω Vcc =300V I D =19A VGS =10V L=1.71mH, Tch =25°C I F =19A, VGS =0V, Tch =25°C I F =19A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 6 00 2.5 13 19 typ. 3.0 10 0.31 26 3600 310 23 26 13 150 20 105 23 30 0.90 0.6 10 max. 3.5 25 250 100 0.365 5400 465 35 39 20 225 30 160 35 45 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to c ase Channel to ambient min. typ. max. 0.96 58.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =8A, L=22.9mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=5.0kV/µs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMV19N60E Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Safe Operati ng Area ID=f(VDS):Duty=0 (Sin gle pu lse), Tc=25°C 10 2 140 t= 1µs 10µs 1 120 10 100 10 ID [A ] 0 100µs 80 PD [W] 1m s 60 10 -1 40 10 20 -2 P o w e r l o s s w a v e fo r m : S q u a r e w a v e fo r m PD tt D.C. 0 0 25 50 75 Tc [°C] 100 125 150 10 -3 10 0 10 1 VDS [V] 10 2 10 3 50 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 ° C Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 40 10 ID [A] ID[A] 30 1 20 10 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 1 2 3 4 5 VGS [V] 6 7 8 9 10 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0.60 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.5V 5.0V 0.55 0.50 10 RDS( on ) [ Ω ] 5.5V 6.0V 10V 0.45 g fs [S] 0.40 1 0.35 0.30 0.1 0.1 1 ID [A] 10 100 0.25 0 5 10 15 20 ID [A] 25 30 35 40 2 FMV19N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=9.5A,VGS=10V FUJI POWER MOSFET 1.0 6 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS= VGS,ID=250µA 0.8 5 4 RDS (o n) [ Ω ] VG S( th ) [V] 0.6 m ax. 3 typ. m in. 2 0.4 m ax. typ. 0.2 1 0.0 - 50 - 25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 75 T ch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=19A,Tch=25 °C 14 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 Ciss Vcc= 120V 300V 480V 10 10 3 VG S [V] C [p F] 8 10 2 Coss 6 4 10 1 Cr ss 2 0 0 20 40 60 80 Qg [nC] 100 120 140 10 0 10 -1 10 0 10 VDS [V] 1 10 2 10 3 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=8.2Ω td(off) tf 10 10 2 IF [A] 1 t [ns] td( on) 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 ID [A] 10 1 3 FMV19N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)