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KS823C09

KS823C09

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    KS823C09 - SCHOTTKY BARRIER DIODE - Fuji Electric

  • 数据手册
  • 价格&库存
KS823C09 数据手册
KS823C09 (5A) SCHOTTKY BARRIER DIODE 6.5 ±0.2 (90V / 5A ) Outline drawings, mm 1.5 —0.1 +0.2 2.3±0.2 0.5 5±0.2 5.5 ±0.2 0 .9 —0.1 4.6 +0.2 Features Surface mount device Low VF Super high speed switching High reliability by planer design JEDEC EIAJ 1. Gate 2, 4. Drain 3. Source Connection diagram Applications High speed power switching 1 2 4 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=100°C Sine wave 10ms Conditions Rating 90 90 5.0* 60 -40 to +150 -40 to +150 Unit V V A A °C °C * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=2.5A VR=VRRM Junction to case Max. 0.9 5.0 10 Unit V mA °C/W 1.0 2.5 ±0.5 (90V / 5A ) Characteristics Forward Characteristic (typ.) 100 10 2 KS823C04 (5A) Reverse Characteristic (typ.) Tj=150°C 10 1 Tj=125°C Forward Current (A) 10 Reverse Current (mA) Tj=100°C 10 0 Tj=150°C Tj=125°C Tj=100°C Tj=25°C 1 10 -1 IF Tj= 25°C IR 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 -2 10 -3 0 10 20 30 40 50 60 70 80 90 100 110 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 3.0 2.8 2.6 Io Reverse Power Dissipation 6.0 5.5 DC 360° VR (W) Reverse Power Dissipation 5.0 4.5 Forward Power Dissipation (W) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 λ 360° α 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 α=180° Square wave λ =60° Square wave λ=120° Sine wave λ =180° Square wave λ =180° DC WF Per 1element 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80 90 100 Io Average Forward Current (A) PR VR Reverse Voltage (V) Current Derating (Io-Tc) 160 150 140 130 1000 Junction Capacitance Characteristic (typ.) 120 110 100 90 80 70 60 50 0 1 2 3 4 5 6 7 8 360° λ Io VR=30V Case Temperature DC Sine wave λ =180° Square wave λ =180° Square wave λ =120° Square wave λ =60° Junction Capacitance (pF) Cj (°C) 100 Tc 10 10 100 Io Average Output Current (A) VR Reverse Voltage (V) λ:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (90V / 5A ) KS823C04 (5A) Surge Capability 100 Peak Half - Wave Current (A) I FSM 10 1 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 2 Transient Thermal Impedance (°C/W) 10 1 10 0 10 -1 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec.)
KS823C09 价格&库存

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