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TS865C04R

TS865C04R

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    TS865C04R - Low IR Schottky barrier diode - Fuji Electric

  • 数据手册
  • 价格&库存
TS865C04R 数据手册
TS865C04R (45V/20A) Low IR Schottky barrier diode 10 +0.5 [200509] Outline drawings, mm 0.9 ±0.3 4.5 ±0.2 1.32 Low IR Low VF Center tap connection 1.5 Max 9.3 ±0.5 Features 1.2 ±0.2 5.08 0.8 —0.1 2.7 +0.2 0.4 +0.2 Applications High frequency operation DC-DC converters AC adapter 1. Gate 2, 4. Drain 3. Source Package : T-pack Epoxy resin UL : V-0 Connection diagram 1 2 3 Maximum ratings and characteristics Maximum ratings Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average output current Non-repetitive surge current non-repetitive reverse surge power dissipation Symbol VRSM VRRM Viso Io IFSM PRM Tj Tstg Conditions tw=500ns, duty=1/40 Rating 45 45 Unit V V V * A A W °C °C Terminals-to-Case, AC.1min. Square wave, duty=1/2 Tc=126°C 1500 20 145 330 +150 -40 to +150 Sine wave 10ms tw=10µs, Tj=25°C Operating junction temperature Storage temperature * Out put current of center tap full wave connection Electrical characteristics (at Ta=25°C Unless otherwise specified ) Item Forward voltage ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=10A VR=40V Junction to case Max. 0.63 175 1.75 Unit V µA °C/W **Rating per element Mechanical characteristics Mounting torque Approximate mass http://www.fujielectric.co.jp/fdt/scd/ Recommended torque 0.3 to 0.5 2 N·m g 3.0 ±0.3 (45V / 20A ) Characteristics Forward Characteristic (typ.) 10 10 Tj=150 C Tj=125 C o Tj=100 C Tj=25 C 1 o o o TS865C04R (20A) Reverse Characteristic (typ.) Tj=150 C 1 o Tj=125 C Tj=100 C o o IF Forward Current (A) IR Reverse Current (mA) 10 0 10 -1 Tj= 25 C -2 o 10 10 -3 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 -4 0 10 20 30 40 50 60 VF Forward Voltage (V) VR Reverse Voltage (V) 16 14 Forward Power Dissipation (max.) Io 4 Reverse Power Dissipation (max.) 360 º DC WF Forward Power Dissipation (W) PR Reverse Power Dissipation (W) λ 12 10 360 º 3 VR Square wave λ=60 o Square wave λ=120 o Sine wave λ=180 8 o Square wave λ=180 DC 6 4 2 o α 2 α=180 o 1 Per 1element 0 0 2 4 6 8 10 12 0 0 Io Average Output Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) (max.) 150 1000 Junction Capacitance Characteristic (max.) Tc Case Temperature ( C) 140 130 DC Square wave λ=180 Sine wave λ=180 o o o Junction Capacitance (pF) o 100 120 360 º Square wave λ=120 λ 110 100 0 λ:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection 6543210987654321 6543210987654321 6543210987654321 Io Square wave λ=60 o VR=20V Cj 5 10 15 20 25 30 10 1 10 100 1000 Io Average Output Current (A) VR 4321 4321 4321 4321 4321 4321 4321 4321 20 40 4321 4321 4321 4321 4321 4321 4321 4321 6543210987654321 6543210987654321 6543210987654321 60 Reverse Voltage (V) (45V / 20A ) TS865C04R (20A) 1000 Surge Capability (max.) I FSM Peak Half - Wave Current (A) 100 10 1 10 100 Number of Cycles at 50Hz 1000 Surge Current Ratings (max.) IFSM PeakHAlf-WaveCurrent (A) 100 10 1 10 100 1000 tTime (ms) Sinewave 10 1 Transient Thermal Impedance (max.) (°C/W) Rth(j-c):1.75°C/W Transient Thermal Impedance 10 0 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec) http://www.fujielectric.co.jp/fdt/scd/
TS865C04R 价格&库存

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