CS101

FUJITSU MICROELECTRONICS DATA SHEET DS06-20210-3Ea Semicustom CMOS Standard Cell CS101 Series ■ DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three types of core transistors with a different threshold voltage can be mixed according to user application. The design rules match industry standards, and a wide range of IP macros are available for use. As well as providing a maximum of 91 million gates, approximately twice the level of integration achieved in previous products, the power consumption per gate is also reduced by about half to 2.7 nW. Also, using the highspeed library increases the speed by a factor of approximately 1.3, with a gate delay time of 12 ps. ■ FEATURES • Technology : 90 nm Si gate CMOS 6- to 10-metal layers. Low-K (low permittivity) material is used for all dielectric inter-layers. Three different types of core transistors (low leak, standard, and high speed) can be used on the same chip. The design rules comply with industry standard processes. Power supply voltage : + 0.9 V to + 1.3 V (A wide range is supported.) Operation junction temperature : − 40 °C to + 125 °C (standard) Gate delay time : tpd = 12 ps (1.2 V, Inverter, F/O = 1) Gate power consumption : 2.7 nW/gate (1.2 V, 2 NAND, F/O = 1, operating rate 0.5) , 1.8 nW/gate (1.0 V, 2 NAND, F/O = 1, operating rate 0.5) High level of integration : Up to 91 million gates Reduced chip sized realized by I/O with pad. Two types of library sets are supported. (Performance focused (1.2 V) , Low power consumption supported (0.9 V to 1.3 V) ) Low power consumption design (multi-power supply design and power gating) is supported. Compliance with industry standard design rules enables non-Fujitsu Microelectronics commercial macros to be easily incorporated. Compiled cell (RAM, ROM, others) Support for ultra high speed (up to 10 Gbps) interface macros. (Continued) • • • • • • • • • • • Copyright©2003-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2007.11 CS101 Series (Continued) • Special interfaces (LVDS, SSTL2, others) • Supports use of industry standard libraries (.LIB). • Uses industry standard tools and supports the optimum tools for the application. • Short-term development using a physical prototyping tool • One pass design using a physical synthesis tool • Hierarchical design environment for supporting large-scale circuits • Support for Signal Integrity, EMI noise reduction • Support for static timing sign-off • Optimum package range : FBGA, FC-BGA, PBGA,TEBGA Note : Items under development are included. ■ MACRO LIBRARIES (including those in preparation) 1. Logic cells (about 400 types) Unit cell having three different types of core transistors with a different threshold value are provided. • Adder • AND • AND-OR • AND-OR Inverter • Buffer • Clock Buffer • Decoder • Delay Buffer • ENOR • EOR • Inverter • Latch • NAND • NOR • OR • OR-AND • OR-AND Inverter • SCAN Flip flop • Non-SCAN Flip Flop • Selector • Others 2. IP macros Compliance with the design rules recommended by the industry standard STARC (Semiconductor Technology Academic Research Center) recommendations which means a wide range of commercially available IP macros can be used. ARM core (ARM7TDMI-S/ARM946E-S/ARM1176JZF-S), CPU/DSP FR71E core, Peripherals IP Mixed signal macro Compiled macro PLL ADC, DAC, OPAMP, others RAM (1-port, 2-port), ROM, product sum calculator, others Analog PLL 3. Special I/O interface macro Interface macro (PHY) Interface macro (Controller) LVDS, SSTL2, SSTL18, PCI, I2C USB2.0 Device/host, Serial ATA, PCI-Express, DDR2, HDMI, others 2 CS101 Series ■ COMPILED CELL Compiled cells are macro cells which are automatically generated with the bit/word configuration specified. The CS101 series has the following types of compiled cells. (Note that each macro is different in word/bit range depending on the column type.) 1. Clock synchronous single-port RAM (1 address : 1 read/write) Column type 4 8 16 Memory capacity (bit) 16 to 144 K 32 to 576 K 64 to 576 K Word range (word) 16 to 1 K 32 to 8 K 64 to 16 K Bit range (bit) 1 to 144 1 to 72 1 to 36 2. Clock synchronous dual port RAM (2 address : 2 read/write) Column type (bit) 4 16 Memory capacity (bit) 16 to 144 K 64 to 144 K Word range (word) 8 to 1 K 32 to 4 K Bit range (bit) 2 to 144 2 to 36 3. Clock synchronous ROM Column type 16 64 Memory capacity (bit) 256 to 4 M 1 K to 4 M Word range (word) 128 to 16 K 512 to 64 K Bit range (bit) 2 to 256 2 to 64 4. Clock synchronous register file (2 address : 1 read, 1 write) Column type 1 Memory capacity (bit) 8 to 18 K Word range (word) 4 to 128 Bit range (bit) 2 to 144 5. Clock synchronous register file (4 address : 2 read, 2 write) Column type 1 Memory capacity (bit) 8 to 18 K Word range (word) 4 to 128 Bit range (bit) 2 to 144 ■ LARGE CAPACITY MEMORY Clock synchronous single-port RAM (1 address : 1 read/write) Column type Memory capacity (bit) Word range (word) 16 64 K to 9 M 8 K to 64 K Bit range (bit) 8 to 144 3 CS101 Series ■ ABSOLUTE MAXIMUM RATINGS Rating Min − 0.5 − 0.5 − 0.5 − 0.5 − 0.5 − 0.5 − 0.5 − 0.5 − 0.5 − 0.5 − 55 − 40 ⎯ ⎯ Max + 1.8 + 2.5 + 3.6 + 4.6 VDDE + 0.5 ( ≤ 2.5) VDDE + 0.5 ( ≤ 3.6) VDDE + 0.5 ( ≤ 4.6) VDDE + 0.5 ( ≤ 2.5) VDDE + 0.5 ( ≤ 3.6) VDDE + 0.5 ( ≤ 4.6) + 125 + 125 *4 *4 Parameter Symbol Application VDDI (Internal) Unit V V V V V V V V V V °C °C mA mA Power supply voltage VDD VDDE (External 1.8 V) VDDE (External 2.5 V) VDDE (External 3.3 V) 1.8 V Input voltage * 1 VI 2.5 V 3.3 V 1.8 V Output voltage Storage temperature Operation junction temperature Power supply pin current *2 Output current *3 VO TSTG TJ ID IO 2.5 V 3.3 V Plastic package ⎯ per VDDI, VDDE VSS pin ⎯ *1 : The values vary depending on the type of macros. *2 : Maximum power supply current that can steadily flow. *3 : Maximum output current that can steadily flow. *4 : Contact your Fujitsu Microelectronics representative for details. Note : VSS = 0 V WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. 4 CS101 Series ■ RECOMMENDED OPERATING CONDITIONS • Dual power supply (VDDE = 1.8 V ± 0.15 V , VDDI = 1.0 V ± 0.1 V/VDDI = 1.2 V ± 0.1 V) Value Min 1.65 0.9 1.1 VDDE × 0.65 VDDE × 0.70 −0.3 −0.3 VDDE × 0.10 −40 Typ 1.8 1.0 1.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 1.95 1.1 1.3 VDDE+0.3 VDDE + 0.3 VDDE × 0.35 VDDE × 0.30 VDDE × 0.40 +125 (VSS = 0 V) Unit V V V V V V V °C Parameter Symbol VDDE Power supply voltage 1.8 V CMOS Normal 1.8 V CMOS Schmitt 1.8 V CMOS Normal 1.8 V CMOS Schmitt VDDI VIH VIL VH TJ “H” level input voltage “L” level input voltage Schmitt hysteresis voltage Operation junction temperature • Dual power supply (VDDE = 2.5 V ± 0.2 V , VDDI = 1.0 V ± 0.1 V/VDDI = 1.2 V ± 0.1 V) Value Min 2.3 0.9 1.1 1.7 1.7 −0.3 −0.3 0.2 −40 Typ 2.5 1.0 1.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 2.7 1.1 1.3 (VSS = 0 V) Unit V V V V V V V °C Parameter Symbol VDDE Power supply voltage 2.5 V CMOS Normal 2.5 V CMOS Schmitt 2.5 V CMOS Normal 2.5 V CMOS Schmitt VDDI VIH VIL VH TJ “H” level input voltage “L” level input voltage VDDE + 0.3 VDDE + 0.3 + 0.7 + 0.7 1.0 +125 Schmitt hysteresis voltage Operation junction temperature 5 CS101 Series • Dual power supply (VDDE = 3.3 V ± 0.3 V , VDDI = 1.0 V ± 0.1 V/VDDI = 1.2 V ± 0.1 V) Value Min 3.0 0.9 1.1 2.0 2.1 −0.3 −0.3 0.2 −40 Typ 3.3 1.0 1.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 3.6 1.1 1.3 VDDE + 0.3 VDDE + 0.3 + 0.8 + 0.7 1.4 +125 (VSS = 0 V) Unit V V V V V V V °C Parameter Symbol VDDE Power supply voltage 3.3 V CMOS Normal 3.3 V CMOS Schmitt 3.3 V CMOS Normal 3.3 V CMOS Schmitt VDDI VIH VIL VH TJ “H” level input voltage “L” level input voltage Schmitt hysteresis voltage Operation junction temperature WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. 6 CS101 Series ■ ELECTRICAL CHARACTERISTICS • Dual power supply : VDDE = 1.8 V, VDDI = 1.0 V/VDDI = 1.2 V (VDDE = 1.8 V ± 0.15 V, VDDI = 1.0 V ± 0.1 V/VDDI = 1.2 V ± 0.1 V, VSS = 0 V, Tj = −40 °C to +125 °C) Parameter “H” level output voltage “L” level output voltage Input leakage current* Pull-up/Pull-down resistor Symbol VOH VOL IL RP Conditions 1.8 V output, IOH = −100 μA 1.8 V output, IOL = 100 μA ⎯ 1.8 V VIL = 0 V at pull-up/ VIH = VDDE at pull-down Value Min VDDE − 0.2 0 − 10 40 Typ ⎯ ⎯ ⎯ 80 Max VDDE 0.2 + 10 155 Unit V V μA kΩ * : The input leakage current may exceed the above value when an input buffer with pull-up or pull-down resistor is used. • Dual power supply : VDDE = 2.5 V, VDDI = 1.0 V/VDDI = 1.2 V (VDDE = 2.5 V ± 0.2 V, VDDI = 1.0 V ± 0.1 V/VDDI = 1.2 V ± 0.1 V, VSS = 0 V, Tj = −40 °C to +125 °C) Parameter “H” level output voltage “L” level output voltage Input leakage current* Pull-up/Pull-down resistor Symbol VOH VOL IL RP Conditions 2.5 V output, IOH = −100 μA 2.5 V output, IOL = 100 μA ⎯ 2.5 V VIL = 0 V at pull-up/ VIH = VDDE at pull-down Value Min VDDE − 0.2 0 − 10 25 Typ ⎯ ⎯ ⎯ 50 Max VDDE 0.2 + 10 85 Unit V V μA kΩ * : The input leakage current may exceed the above value when an input buffer with pull-up or pull-down resistor is used. • Dual power supply : VDDE = 3.3 V, VDDI = 1.0 V/VDDI = 1.2 V (VDDE = 3.3 V ± 0.3 V, VDDI = 1.0 V ± 0.1 V/VDDI = 1.2 V ± 0.1 V, VSS = 0 V, Tj = −40 °C to +125 °C) Parameter “H” level output voltage “L” level output voltage Input leakage current* Pull-up/Pull-down resistor Symbol VOH VOL IL RP Conditions 3.3 V output, IOH = −100 μA 3.3 V output, IOL = 100 μA ⎯ 3.3 V VIL = 0 V at pull-up/ VIH = VDDE at pull-down Value Min VDDE − 0.2 0 −10 15 Typ ⎯ ⎯ ⎯ 33 Max VDDE 0.2 + 10 70 Unit V V μA kΩ * : The input leakage current may exceed the above value when an input buffer with pull-up or pull-down resistor is used. 7 CS101 Series ■ AC CHARACTERISTICS Parameter Delay time Symbol tpd *1 Value Min typ *2 × tmin *3 Typ typ *2 × ttyp *3 Max typ *2 × tmax *3 Unit ns *1 : Delay time = propagation delay time, enable time, disable time *2 : “typ” is calculated based on the cell specifications. *3 : Measurement condition Measurement condition VDD = 1.2 V ± 0.1 V, VSS = 0 V, Tj = − 40 °C to +125 °C tmin 0.62 ttyp 1.00 tmax 1.57 Note : The values are reference values, which vary depending on the cells. ■ I/O PIN CAPACITANCE Parameter Input pin Output pin I/O pin Symbol CIN COUT CI/O Value Max16 Max16 Max16 Unit pF pF pF Note : The capacitance values vary depending on the package and pin positions. ■ DESIGN METHODS Fujitsu Microelectronics’s Reference Design Flow provides the following functions that help shorten the development time of large scale and high quality LSIs. • High reliability design estimation in the early stage of physical design realized by physical prototyping. • Layout synthesis with optimized timing realized by physical synthesis tools. • High accuracy design environment considering drop in power supply voltage, signal noise, delay penalty, and crosstalk. • I/O design environment (power line design, assignment and selection of I/Os, package selection) considering noise. ■ PACKAGES Packages available for existing series can be used for CS101 series. This allows smooth replacement with previously developed products. Please contact your Fujitsu Microelectronics agent for details of delivery times. FBGA package PBGA package TEBGA package : Max 424 pins : Max 420 pins : Max 900 pins FC-BGA package : Max 2116 pins (Packages under planning are included.) 8 CS101 Series MEMO 9 CS101 Series MEMO 10 CS101 Series MEMO 11 FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/microelectronics/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu,Seoul 135-280 Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://www.fmk.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 151 Lorong Chuan, #05-08 New Tech Park, Singapore 556741 Tel: +65-6281-0770 Fax: +65-6281-0220 http://www.fujitsu.com/sg/services/micro/semiconductor/ FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. 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