BAT85

BAT85 Schottky Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ For general purpose applications. ♦ This diode features low turn-on voltmax. ∅.079 (2.0) max. .150 (3.8) age. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. with type designation BAS85. Cathode Mark min. 1.083 (27.5) ♦ This diode is also available in the MiniMELF case max. ∅.020 (0.52) MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Continuous Reverse Voltage Forward Continuous Current at Tamb = 25 °C Peak Forward Current at Tamb = 25 °C Surge Forward Current at tp < 1 s, Tamb = 25 °C Power Dissipation at Tamb = 65 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 30 2001) 3001) 6001) 2001) 125 –65 to +125 –65 to +150 Unit V mA mA mA mW °C °C °C VR IF IFM IFSM Ptot Tj Tamb TS Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. 4/98 BAT85 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage tested with 10 µA Pulses Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.1 mA at IF = 1 mA at IF = 10 mA at IF = 30 mA at IF = 100 mA Leakage Current at VR = 25 V Capacitance at VR = 1 V, f = 1 MHz Thermal Resistance Junction to Ambient Air Reverse Recovery Time from IF = 10 mA to IR = 10 mA to IR = 1 mA 1) Min. 30 Typ. – Max. – Unit V V(BR)R VF VF VF VF VF IR Ctot RthJA trr – – – – – – – – – – – – 0.5 – – – – – 0.24 0.32 0.4 – 0.8 2 10 0.431) 5 V V V V V µA pF K/mW ns Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.