BC859

BC856 THRU BC859 Small Signal Transistors (PNP) SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) 3 ♦ Especially suited for automatic insertion in Top View .056 (1.43) .052 (1.33) thick- and thin-film circuits. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC858 and BC859 can be supplied in all three groups. The BC859 is a low noise type. .045 (1.15) .037 (0.95) 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) ♦ As complementary types, the NPN transistors BC846 … BC849 are recommended. Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code Type BC856A B BC857A B C BC858A B C MECHANICAL DATA .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Marking 3A 3B 3E 3F 3G 3J 3K 3L Type BC859A B C Marking 4A 4B 4C Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Voltage BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 –VCBO –VCBO –VCBO –VCES –VCES –VCES –VCEO –VCEO –VCEO –VEBO –IC –I CM –I BM I EM Ptot Tj TS Value 80 50 30 80 50 30 65 45 30 5 100 200 200 200 3101) 150 – 65 to +150 Unit V V V V V V V V V V mA mA mA mA mW °C °C Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 4/98 BC856 THRU BC859 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol h-Parameters at –VCE = 5 V, –IC = 2 mA, f = 1 kHz Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain at –VCE = 5 V, –IC = 10 µA Current Gain Group A B C at –VCE = 5 V, –IC = 2 mA Current Gain Group A B C Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air Collector Saturation Voltage at –IC = 10 mA, –IB = 0.5 mA at –IC = 100 mA, –IB = 5 mA Base Saturation Voltage at –IC = 10 mA, –IB = 0.5 mA at –IC = 100 mA, –IB = 5 mA Base-Emitter Voltage at –VCE = 5 V, –IC = 2 mA at –VCE = 5 V, –IC = 10 mA Collector-Emitter Cutoff Current BC856 at –VCE = 80 V at –VCE = 50 V BC857 at –VCE = 30 V BC858, BC859 at –VCE = 80 V, Tj = 125 °C BC856 at –VCE = 50 V, Tj = 125 °C BC857 at –VCE = 30 V, Tj = 125 °C BC858, BC859 at –VCB = 30 V at –VCB = 30 V, Tj = 150 °C Gain-Bandwidth Product at –VCE = 5 V, –IC = 10 mA, f = 100 MHz 1) Min. Typ. Max. Unit hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre – – – 1.6 3.2 6 – – – – – – 220 330 600 2.7 4.5 8.7 18 30 60 1.5 · 10–4 2 · 10–4 3 · 10–4 – – – 4.5 8.5 15 30 60 110 – – – – – – kΩ kΩ kΩ µS µS µS – – – hFE hFE hFE hFE hFE hFE RthSB RthJA –VCEsat –VCEsat –VBEsat –VBEsat –VBE –VBE –ICES –ICES –ICES –ICES –ICES –ICES –ICBO –ICBO fT – – – 110 200 420 – – – – – – 600 – – – – – – – – – – 90 150 270 180 290 520 – – 90 250 700 900 660 – 0.2 0.2 0.2 – – – – – 150 – – – 220 450 800 3201) 4501) 300 650 – – 750 800 15 15 15 4 4 4 15 5 – – – – – – – K/W K/W mV mV mV mV mV mV nA nA nA µA µA µA nA µA MHz Device on fiberglass substrate, see layout BC856 THRU BC859 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Capacitance at –VCB = 10 V, f = 1 MHz Noise Figure at –VCE = 5 V, –IC = 200 µA, RG = 2 kΩ, f = 1 kHz, ∆f = 200 Hz BC856, BC857, BC858 BC859 Noise Figure at –VCE = 5 V, –IC = 200 µA, RG = 2 kΩ, f = 30…15000 Hz BC859 CCBO Min. – Typ. – Max. 6 Unit pF F F – – 2 1 10 4 dB dB F – 1.2 4 dB .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859 Collector-base cutoff current versus junction temperature nA 4 10 BC856...BC859 10 -ICBO 3 10 2 10 Test voltage -V : CBO equal to the given maximum value -V CEO typical maximum 10 -1 1 0 100 Tj 200 °C RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859 Collector current versus base-emitter voltage Collector saturation voltage versus collector current mA 102 -V CE = 5 V T = 25 °C amb 5 4 3 BC856...BC859 V 0.5 -IC -IB = 20 BC856...BC859 0.4 -VCEsat 0.3 -IC 2 10 5 4 3 2 0.2 1 5 4 3 2 T amb = 100 °C 0.1 25 °C -50 °C 0 0.5 -V BE 1V 10-1 2 5 10-1 0 1 2 5 10 2 -IC 5 102 mA RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859