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3SM6

3SM6

  • 厂商:

    GENNUM(升特)

  • 封装:

    Axial

  • 描述:

    DIODEGENPURP600V5AAXIAL

  • 数据手册
  • 价格&库存
3SM6 数据手册
1N5550 THRU 1N5554 3SM2 THRU 3SM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal shock resistance Low forward voltage drop Avalanche capability These products are qualified to MIL-PRF-19500/420. They can be supplied fully released as JAN, JANTX, JANTXV, and JANS versions. Absolute Maximum Ratings Electrical specifications @ TA = 25°C unless otherwise specified. Symbol 1N 5550 3SM2 1N 5551 3SM4 1N 5552 3SM6 1N 5553 3SM8 1N 5554 3SM0 Units Working Reverse Voltage VRWM 200 400 600 800 1000 V Average Forward Current @ 55°C in free air, lead length 0.375" IF(AV) 5.0 A Repetitive Surge Current @ 55°C in free air, lead length 0.375" IFRM 25 A Non-Repetitive Surge Current (tp = 8.3mS @ VR & TJMAX) (tp = 8.3mS, @ VR & 25°C) IFSM 100 150 A Storage Temperature Range TSTG -65 to +175 °C Revision: September 22, 2008 1 www.semtech.com 1N5550 THRU 1N5554 3SM2 THRU 3SM0 POWER DISCRETES Electrical Specifications Symbol Average Forward Current (sine wave) - max. TA = 55°C - max. L = 3/8"; TL = 55°C 1N 5550 3SM2 1N 5551 3SM4 1N 5552 3SM6 1N 5553 3SM8 1N 5554 3SM0 Units IF(AV) IF(AV) 3.0 5.0 A I2t for fusing (t = 8.3mS) max I2t 42 A 2S Forward Voltage Drop max. @ IF = 3.0A, Tj = 25°C VF 1.0 V Reverse Current max. @ VRWM, Tj = 25°C @ VRWM, Tj = 125°C IR IR 1.0 60 µA Reverse Recovery Time max. 0.5A IF to 1.0A IRM recovers to 0.25A IRM(REC) trr 2.0 µS Junction Capacitance typ. @ VR = 5V, f = 1MHz Cj 92 pF Thermal Characteristics Symbol Thermal Resistance-Junction to Lead Lead length = 0.375" Lead length = 0.0" Thermal Resistance-Junction to Ambient on 0.06" thick pcb. 1 oz. co p p e r 1N 5550 3SM2 1N 5551 3SM4 1N 5552 3SM6 1N 5553 3SM8 1N 5554 3SM0 Units Rθ JL Rθ JL 22 4 °C/W Rθ JA 47 °C/W Typical Characteristics Fig 1. Typical junction capacitance as a function of reverse voltage.  2008 Semtech Corp. 2 www.semtech.com 1N5550 THRU 1N5554 3SM2 THRU 3SM0 POWER DISCRETES Typical Characteristics Fig 2. Forward voltage drop as a function of forward current Fig 3. Maximum power versus lead temperature Fig 4. Forward power dissipation as a function of forward current, for sinusoidal operation.  2008 Semtech Corp. Fig 5. Maximum ratings for capacitive loads. 3 www.semtech.com 1N5550 THRU 1N5554 3SM2 THRU 3SM0 POWER DISCRETES Ordering Information Part Number Description 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 Axial leaded hermetically sealed(1) Note: (1) Available in bulk and tape and reel packaging. Please consult factory for quantities. Outline Drawing G4 Dimensions Inches DIMN Millimeters Note MIN MAX MIN MAX A 0.115 0.18 2.92 4.57 - B 0.9 1.3 22.86 33.02 - C 0.13 0.3 3.3 7.62 - D - 0.03 - 0.8 1 E 0.036 0.042 0.92 1.07 - Note: (1) Lead diameter uncontrolled over this region. Weight = 0.039oz Contact Information Semtech Corporation Power Discretes Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804  2008 Semtech Corp. 4 www.semtech.com Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Semtech: 3SM2 3SM4 3SM0 3SM8 3SM6 1N5550 1N5554 1N5552 1N5551 1N5553 JANTX1N5553 JANTXV1N5553 JAN1N5553 JANTXV1N5552 JANTXV1N5550 JANTXV1N5554 JANTXV1N5551

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