2010

2010 10 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION The 2010 is a COMMON BASE transistor capable of providing 10 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. CASE OUTLINE 55BT-1, Style ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 30 Watts 50 Volts 3.5 Volts 2.0 A - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 2 GHz Vcb = 28 Volts Po= 10 Watts As Above F = 2 GHz, Po = 10 W MIN 10 2 7.0 8.0 40 20:1 TYP MAX UNITS Watt Watt dB % ηc VSWR1 BVces BVcbo BVebo Icbo hFE Cob θjc Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance Ic = 20 mA Ic = 4 mA Ie = 4 mA Vcb = 28 Volts 50 45 3.5 4.0 20 6.0 Volts Volts Volts mA o Vce = 5 V, Ic = 400 mA F = 1 MHz, Vcb = 28 V pF C/W Issue August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 2010 August 1996