VAM120

VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range. CASE OUTLINE 55HT, Style 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emiter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 140 Watts 60 Volts 4.0 Volts 12 A - 65 to +150 oC +200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain TEST CONDITIONS F = 150 MHz Vcc = 27 Volts F = 150 MHz Vcc = 13.5 Volts Efficiency Load Mismatch Tolerance MIN 120 7.8 30 4.8 15 9.0 7.5 6.0 65 20 TYP MAX UNITS Watts Watts dB Watts Watts dB % 10 30:1 BVebo BVces BVceo Cob hFE θjc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Output Capacitance DC - Current Gain Thermal Resistance Ie = 5 mA Ic = 20 mA Ie = 50 mA Vce = 5 V, Ic = 1 A 4.0 60 32 240 10 1.2 Volts Volts Volts pF o C/W Issue August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 VAM -120 August 1996