GSFH0970

GSFH0970 100V N-Channel MOSFET Main Product Characteristics BVDSS 100V RDS(ON) 3.5mΩ D G G 160A ID S D D TO-220 S Schematic Diagram Features and Benefits § Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The GSFH0970 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V 160 A 100 A Drain (Chip Drain (Chip Current-Continuous(TC=25°C) Limitation) Current-Continuous(TC=100°C) Limitation) ID Drain Current-Pulsed1 IDM 640 A Single Pulse Avalanche Energy2 EAS 280 mJ Single Pulse Avalanche Current2 IAS 75 A 208 W 1.66 W/°C Power Dissipation(TC=25°C) PD Power Dissipation-Derate Above 25°C Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Thermal Resistance, Junction-to-Case RθJC 0.6 °C/W Storage Temperature Range TSTG -50 To +150 °C TJ -50 To +150 °C Operating Junction Temperature Range 1/5 GSFH0970 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 100 - - V - 0.05 - V/°C - - 1 μA - - 10 μA VGS=±20V, VDS=0V - - ±100 nA VGS=10V, ID=20A - 2.8 3.5 mΩ 1.5 2.5 3.5 V - -5 - mV/°C - 15 - S - 295 450 - 70 140 Off Characteristics Drain-Source Breakdown Voltage BVDSS BVDSS Temperature Coefficient △BVDSS/△TJ Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS VGS=0V, ID=250μA Reference to 25°C, ID=1mA VDS=100V , VGS=0V, TJ=25°C VDS=80V , VGS=0V, TJ=125°C On Characteristics Static Drain-Source OnResistance RDS(ON) Gate Threshold Voltage VGS(th) VGS(th) Temperature Coefficient Forward Transconductance VDS=VGS, ID=250μA △VGS(th) gFS VDS=10V, ID=3A Dynamic and Switching Characteristics Total Gate Charge3,4 Qg VDS=80V, ID=10A, VGS=10V nC Gate-Source Charge3,4 Qgs Gate-Drain Charge3,4 Qgd - 75 150 td(on) - 66.2 120 - 79.6 160 - 242 480 - 103 200 - 17800 26000 - 980 1900 - 78 150 - 1.8 3.6 Ω - - 160 A - - 320 A - - 1 V - 64 - nS - 150 - nC Turn-On Delay Time3,4 Rise Time3,4 Turn-Off Delay Time3,4 Fall Time3,4 Input Capacitance tr td(off) tf Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance VDD=50V, RG=6Ω VGS=10V, ID=1A Rg VDS=25V, VGS=0V, F=1MHz VGS=0V, VDS=0V, F=1MHz nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD Reverse Recovery Time Trr Reverse Recovery Charge Qrr VG=VD=0V, Force Current VGS=0V, IS=1A, TJ=25°C VGS=0V, IS=10A, di/dt=100A/μs, TJ=25°C Note : 1. 2. 3. 4. Repetitive Rating : Pulsed width limited by maximum junction temperature. VDD=50V,VGS=10V,L=0.1mH,IAS=75A.,RG=25Ω Starting TJ=25°C The data tested by pulsed , pulse width≦ 300us , duty cycle≦2%. Essentially independent of operating temperature. 2/5 GSFH0970 100V N-Channel MOSFET Normalized On Resistance ID , Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves TJ , Junction Temperature (°C) Figure 1. Continuous Drain Current vs. TC Figure 2. Normalized RDSON vs. TJ Normalized Gate Threshold Voltage VGS , Gate to Source Voltage (V) TC, Case Temperature (°C) TJ , Junction Temperature (°C) Figure 3. Normalized Vth vs. TJ Figure 4. Gate Charge Characteristics Normalized Thermal Response (RΘJC) ID , Drain Current (A) Qg , Gate Charge (nC) VDS, Drain to Source Voltage (V) Square Wave Pulse Duration(s) Figure 6. Maximum Safe Operation Area Figure 5. Normalized Transient Impedance 3/5 GSFH0970 100V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Firgure 7. Switching Time Waveform Firgure 8. Gate Charge Waveform 4/5 GSFH0970 100V N-Channel MOSFET Package Outline Dimensions (TO-220) Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 10.300 9.700 0.406 0.382 A1 8.840 8.440 0.348 0.332 A2 1.250 1.050 0.049 0.041 A3 5.300 5.100 0.209 0.201 B 16.200 15.400 0.638 0.606 C 4.680 4.280 0.184 0.169 C1 1.500 1.100 0.059 0.043 D 1.000 0.600 0.039 0.024 E 3.800 3.400 0.150 0.134 G 9.300 8.700 0.366 0.343 H 0.600 0.400 0.024 0.016 K 2.700 2.100 0.106 0.083 L 13.600 12.800 0.535 0.504 M 1.500 1.100 0.059 0.043 N 2.590 2.490 0.102 0.098 deep0.2 TYP. Φ0.059 TYP. T DIA www.goodarksemi.com W0.35 Φ1.5 TYP. W0.014 5/5 deep0.008 TYP. Doc.USGSFH0970xSP2.0 Jul.2019