G2S06540B

Datasheet V2016.1.0 G2S06540B 650V/40A Silicon Carbide Power Schottky Barrier Diode Features • Rated to 650V at 40 Amps • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics VRRM 650 V IF, Tc≤135℃ 20* A QC 56* nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications PKG: TO-247 • SMPS, e.g., CCM PFC; • Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No. Package Type Marking G3S06540B TO-247-3 pin G3S06540B G2S06540B ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06540B 650V/40A Silicon Carbide Power Schottky Barrier Diode Maximum Ratings Parameter Symbol Test Condition Value Unit Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current VRRM 650 VRSM 650 VDC 650 45* 20* 100* A 140* A Power Dissipation PTOT W W Operating Junction Tj 141.5* 61.3* -55℃ to 175℃ Storage Temperature IF IFRM IFSM TC=25℃ TC=135℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A -55℃ to 175℃ Tstg M3 Screw 6-32 Screw Mounting Torque V 1 8.8 ℃ ℃ Nm lbf-in * Per leg ; ** Per diode Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC Value Typ. Unit 1.06* 0.53** Test Condition ℃/W * Per leg ; ** Per diode G2S06540B ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06540B 650V/40A Silicon Carbide Power Schottky Barrier Diode Electrical Characteristics Parameter Symbol Numerical Typ. Max. Test Conditions Forward Voltage VF IF=20A, Tj=25℃ 1.7 1.8 IF=20A, Tj=175℃ 2 2.5 Reverse Current IR VR=650V, Tj=25℃ 30 100 VR=650V, Tj=175℃ 60 200 56 - VR=0V, Tj=25℃, f=1MHZ 1170 1300 VR=200V, Tj=25℃, f=1MHZ 110 120 VR=400V, Tj=25℃, f=1MHZ 100 Unit 108 V µA VR=400V, Tj=150℃ QC Total Capacitive Charge VR Qc = ∫ 0 C Total Capacitance C (V )dV nC pF * Per leg Performance Graphs Per leg: 1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj : 12 26 24 22 Tj=25℃ Tj=75℃ Tj=125℃ Tj=175℃ 18 I R Reverse Current ( u A ) IF F o r w a r d C u r r e n t ( A ) 20 10 16 14 12 10 8 8 6 Tj=25℃ Tj=75℃ Tj=125℃ Tj=175℃ 4 6 2 4 2 0 0 0 0.5 1 1.5 V F Forward Voltage(V) G2S06540B 2 2.5 0 100 200 300 400 500 600 700 800 V R Reverse Voltage(V) ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06540B 650V/40A Silicon Carbide Power Schottky Barrier Diode 3) Current Derating 4)Capacitance vs. reverse voltage : 110 1200 20% 30% 50% 70% DC 90 80 Duty* Duty* Duty* Duty* 1100 1000 900 70 C Capacitance(pF) IF ( p e a k ） P e a k F o r w a r d C u r r e n t ( A ) 100 60 50 40 30 800 700 600 500 400 20 300 10 200 100 0 25 50 75 100 125 150 175 0 0.01 T C Case Temperature(℃) *Frequency>1KHz 0.1 1 10 100 1000 V R Reverse Voltage(V) Package TO-247 DIM A1 B1 C1 D E F G H I J K L M N O P G2S06540B Millimeters Min. Max. 15.45 15.75 20.3 20.6 24.8 25.1 6 1.8 2.2 2.8 3.2 5.45 41.08 41.12 1 1.4 0.5 0.7 2.2 2.6 3.5 2.1 2.3 4.85 5.15 0 0.3 3.6 Inches Min. 0.608 0.799 0.976 Max. 0.620 0.811 0.988 0.236 0.071 0.110 0.087 0.126 0.215 1.617 0.039 0.020 0.087 1.619 0.055 0.028 0.102 0.138 0.083 0.191 0.000 0.091 0.203 0.012 0.142 ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06540B 650V/40A Silicon Carbide Power Schottky Barrier Diode Note: The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and other certifications can be obtained from GPT sales representatives or GPT website: http://globalpowertech.cn/English/index.asp More product datasheets and company information can be found in: http://globalpowertech.cn/English/index.asp G2S06540B ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED