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G2N7002_06

G2N7002_06

  • 厂商:

    GTM

  • 封装:

  • 描述:

    G2N7002_06 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM CORPORATION

  • 数据手册
  • 价格&库存
G2N7002_06 数据手册
Pb Free Plating Product ISSUED DATE :2003/06/27 REVISED DATE :2006/01/17C G2N7002 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 4.5 500mA Description The G2N7002 is universally used for all commercial-industrial surface mount applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings at Ta = 25 : Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage C ontinuous N on-repetitive (tp Pulsed Drain Current P ower Dissipation Thermal Resistance ,Junction-to-Ambient (2) Symbol Tj, Tstg Ratings -55 ~ +150 60 ±20 ±40 500 800 225 556 Unit : V V V mA mA mW : /W VDS VGS 50us) (1) VGSM ID IDM PD RthJA C ontinuous Drain Current Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source on-State Resistance Forward Transconductance Input Capacitance Output Capacitance R everse Transfer Capacitance (2)Pulse Width 300us, Duty cycle 2%. Symbol BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) GFS Ciss Coss Crss M in. 60 1 500 80 Typ. Max. 2.5 ±100 1 5 4.5 50 25 5 mS pF pF pF VDS=25V, VGS =0V, f=1MHz Unit V V nA uA mA Test Conditions VGS=0, ID=250uA VDS=2.5V, ID=0.25mA VGS=±20V, VDS=0 VDS=60V, VGS =0 VDS=7.5V, VGS=10V ID=50mA, VGS =5V ID=500mA, VGS=10V VDS>2 VDS(ON), ID=200mA (1)The Power Dissipation of the package may result in a continuous train current. G2N7002 Page: 1/3 ISSUED DATE :2003/06/27 REVISED DATE :2006/01/17C Characteristics Curve G2N7002 Page: 2/3 ISSUED DATE :2003/06/27 REVISED DATE :2006/01/17C Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2N7002 Page: 3/3
G2N7002_06 价格&库存

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