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GM1616A

GM1616A

  • 厂商:

    GTM

  • 封装:

  • 描述:

    GM1616A - NPN EPITAXIAL PLANAR TRANSISTOR - GTM CORPORATION

  • 数据手册
  • 价格&库存
GM1616A 数据手册
CORPORATION GM1616A Description Package Dimensions NP N E PITAX I AL P L ANAR T RANS ISTO R ISSUED DATE :2004/08/02 REVISED DATE : The GM1616A is designed for audio frequency power amplifier and medium speed switching. SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings Ta = 25 : Parameter Ratings Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect Current*(Pulse) Junction Temperature Storage Temperature Range Total Power Dissipation VCBO VCEO VEBO IC IC Tj TsTG PD Typ. 150 0.9 640 160 0.07 0.95 0.07 G 200-400 Max. 100 100 300 1.2 700 600 19 Unit V V V nA nA mV mV mV 120 60 6 1 2 +150 -55 ~ +150 750 Test Conditions IC=100uA IC=1mA IE=10uA VBE=60V VBE=6V lC=1A,IB=50mA IC=1A, IB=50mA VCE=2V,IC=50mA VCE=2V,IC=100mA VCE=2V,IC=1A VCE=2V,IC=100mA VCB=10V ,IE=0,f=1MHz VCE=10V,IC=100mA IB1=-IB2=10mA VBE(off)=2~-3V V V V A A mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) VBE(on) *HFE1 *HFE2 fT Cob ton ts tf Rank Range at Ta = 25 : Min. 120 60 6 600 135 81 100 - MHz pF uS uS uS L 300-600 Classificaton of hFE1 Y 135-270 *Pulse Test : Pulse Width
GM1616A 价格&库存

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