GMA06

CORPORATION G M A0 6 Description Package Dimension NPN SILICON TRANSISTOR The GMA06 is Amplifier Transistor. ISSUED DATE :2004/05/28 REVISED DATE : REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation at Ta=25 : Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 80 80 4 500 1.2 V V V mA W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICEO *VCE(sat) VBE(sat) *hFE1 *hFE2 fT at Ta = 25 : Min. 80 80 4 50 50 100 Typ. MHz Max. 100 100 250 1.2 Unit V V V nA nA mV V IC=100uA IC=1mA IE=100uA VCB=80V VCE=60V IC=100mA, IB=10mA IC=100mA, VCE=1V VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA, f=100MHz Test Conditions *Pulse Test:Pulse width 380us,Duty Cycle 2% 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/05/28 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671~4 FAX : 86-21-38950165 2/2