GMBD1201S

ISSUED DATE :2005/07/01 REVISED DATE : G M B D 1 2 0 1 \ A\ C \ S Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 1 0 0 V, C U R R E N T 2 0 0 m A The GMBD1201\A\C\S are general purpose for small signal diodes. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 C 0C Absolute Maximum Ratings (TA = 25 : ) Parameter Max. Repetitive Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward surge Current @1s @1ms Symbol VRRM IF(AV) IFSM PD R JA TSTG TJ Power Dissipation Thermal Resistance Junction to Ambient Air Storage Temperature Range Operating Junction Temperature Ratings 100 200 1 2 350 357 -55 ~ +150 +150 Unit V mA A mW : /W : : Electrical Characteristics (TA = 25 : ) Characteristics Breakdown Voltage Forward Voltage Symbol VR VF Min. 100 Typ. - Max. - 700 800 1.1 1.2 1.3 - 800 900 1.2 1.3 1.4 25 50 5.0 2.0 4.0 Unit Test Conditions V IR=100uA mV IF=1mA mV IF=10mA V V V nA nA uA pF ns Reverse Current IR Total Capacitance Reverse Recovery Time CT trr IF=100mA IF=200mA IF=300mA VR=20V VR=50V VR=50V, TA=150 : VR=0, f=1.0MHz IF=IR=10mA, IRR=1mA, RL=100 1/3 ISSUED DATE :2005/07/01 REVISED DATE : Characteristics Curve 110 R Fig 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100uA Fig 2. Reverse Current vs. Reverse Voltage IR - 10 to 100V Fig 3. Forward Voltage vs. Forward Current VF - 1.0 to 100uA Fig 4. Forward Voltage vs. Forward Current VF - 0.1 to 10mA F Fig 5. Forward Voltage vs. Forward Current VF - 10 to 800mA Fig 6. Total Capacitance vs. Reverse Voltage 2/3 ISSUED DATE :2005/07/01 REVISED DATE : Fig 7. Reverse Recovery Time vs. Reverse Current TRR - IR 10 to 60mA 500 Fig 8. Average Rectified Current (IF(AV)) vs. Ambient Temperature(TA) Power Dissipation, PD[mW] 400 300 200 100 0 0 50 100 150 200 Average Temperature, Io[ : ] Fig 9. Power Derating Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 3/3