GMBT2222A

CORPORATION G M BT 2 2 2 2 A Description Features & frequency current gain High & High speed switching & For complementary use with PNP type GMBT2907A ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B NPN E PITAX I AL PL ANAR T RANSI STOR The GMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature C ollector to Base Voltage at Ta=25 : C ollector to Emitter Voltage at Ta=25 : Emitter to Base Voltage at Ta=25 : C ollector Current at Ta=25 : Total Power Dissipation at Ta=25 : Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 75 40 6 600 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT C ob at Ta = 25 : Min. 75 40 6 35 50 75 100 40 300 Typ. Max. 10 10 10 500 1.0 1.2 2.0 300 8 MHz pF Unit V V V nA nA nA mV V V V IC=100uA , IE=0 IC=10mA, IB=0 IE=10uA, IC=0 VCB=60V, IE=0 VCE=60V ,VEB(OFF)=3V VEB=3V, IC=0 IC=380mA, IB=10mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCB=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions 1/4 CORPORATION Switching Characteristics Symbol td (Delay Time) tr (Rise Time) ts (Storage Time) tf (Fall Time) Min. Typ. Max. 10 25 225 60 Unit ns ns ns ns VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B Test Conditions Switching Time Equivalent Test Circuits Turn-On Time Turn-Off Time Characteristics Curve Fig 1. DC Current Gain Fig 2. Collector saturation Region 2/4 CORPORATION ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B Fig 3. Turn-On Time Fig 4. Turn-Off Time Fig 5. Frequency Effects Fig 6. Source Resistance Effects Fig 7. Capacitance Fig 8. Current-Gain Bandwidth Product 3/4 CORPORATION ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B Fig 9. “On” Voltage Fig 10. Temperature Coefficients Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4