GMBT9013

GM BT9013 Description Package Dimensions 1/3 N P N E PI TA XI A L T RA N SI STO R The GMBT9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Unit Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 40 20 5 500 225 V V V mA mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) HFE1 HFE2 fT C ob at Ta = 25 : Min. 40 20 5 112 40 100 Typ. 180 Max. 100 100 0.6 1.2 0.9 300 8 MHz pF Unit V V V nA nA V V V IC=100uA , IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCE=25V, IE=0 VEB=3V, IC=0 IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V,IC=500mA VCE=1V, IC=10mA,f=100MHz VCB=10V, f=1MHz, IE=0 Test Conditions Classification Of hFE1 Rank hFE G 112-166 H 144-202 L 176-300 2/3 Characteristics Curve 3/3 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165