G M B TA 5 6
Package Dimensions
The GMBTA56 is amplifier applications.
1/2 PNP SILICON TRANSISTOR
Description
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -80 -80 -4 -500 225 V V V mA mW Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat) VBE(on) HFE1 HFE2 fT
at Ta = 25 :
Min. -80 -80 -4 50 50 100 MHz Typ. Max. -100 -100 -250 -1.2 Unit V V V nA nA mV V IC=-100uA , IE=0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCB=-80V, IE=0 VCE=-60V IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA VCE=-2V, IC=-10mA, f=1MHz Test Conditions
2/2
Characteristics Curve
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