GPN2222A

ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B GPN2222A Description Features NP N EP ITAX I AL PL ANAR TANSI STOR The GPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications. *Low Collector Saturation Voltage *High Speed Switching *For Complementary Use with PNP Type GPN2907A Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 75 40 6 600 625 Max. 10 10 50 0.3 1.0 1.2 2 300 8 Unit V V V nA nA nA V V V V Test Conditions IC=10uA ,IE=0 IC=10mA ,IB=0 IE=10uA ,IC=0 VCE=60V, IE = 0 VCE=60V,VBE(OFF)=3V VEB=3V, Ic = 0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V,IC=10mA VCE=10V,IC=150mA VCE=10V,IC=500mA VCE=1V,IC=150mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE = 0,f=1MHz * P ulse Test: Pulse Width 380us, Duty Cycle 2% Unit V V V mA mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 * VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 *hFE6 fT Cob at Ta = 25 : Min. 75 40 6 35 50 75 100 40 50 300 Typ. - MHz pF 1/3 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B Characteristics Curve 2/3 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 3/3