GSC4N01

Pb Free Plating Product ISSUED DATE :2006/12/19 REVISED DATE : GSC4N01 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 30m 6A The GSC4N01 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.5V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings 20 ±10 6 4.8 20 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-amb Value 50 Unit /W GSC4N01 Page: 1/4 ISSUED DATE :2006/12/19 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 20 0.6 - Typ. 10 11 2.0 3.0 13 35 45 50 870 260 60 Max. 1.2 ±100 1 25 30 40 16 1200 - Unit V V S nA uA uA m Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=2.5V, ID=2A VGS= ±10V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=4.2A VGS=2.5V, ID=2.0A ID=4.2A VDS=12V VGS=4.5V VDS=12V ID=4.2A VGS=4.5V RG=2.3 VGS=0V VDS=10V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Symbol VSD Min. Typ. Max. 1.2 Unit V Test Conditions IS=1.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 : /W when mounted on Min. copper pad. GSC4N01 Page: 2/4 ISSUED DATE :2006/12/19 REVISED DATE : Characteristics Curve ID (A) VDS (V) ID (A) VGS (V) Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics ID (A) Normalized RDS (ON) ( ) RDS (ON) ( ) TJ, Temperature ( : ) Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature RDS (ON) ( ) VGS (V) IS (A) VDS (V) Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics GSC4N01 Page: 3/4 ISSUED DATE :2006/12/19 REVISED DATE : VDS (V) IDSS, Leakage (nA) ID (A) VDS (V) Fig 7. Maximum Safe Operating Area Fig 8. Drain-Source Leakage Current v.s. Voltage Power Dissipation Qg (nC) Capacitance (pF) VGS (V) VGS VDS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Fig 11. Normalized Maximum Transient Thermal Impedance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC4N01 Page: 4/4