GU08P20

Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GU08P20 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -200V 680m -8A The GU08P20 (TO-263 package) is universally preferred f or all commercial-industrial surface mount applications and suited f or low v oltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Description Features Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0˚ 8˚ 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : Tj, Tstg Ratings -200 ±20 -8 -5 -30 96 0.77 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.3 62 Unit : /W : /W GU08P20 Page: 1/4 ISSUED DATE :2006/01/19 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. -200 -2.0 - Typ. -0.03 4 20 5 13 12 14 64 28 1210 170 45 3.6 Max. -4.0 ±100 -25 -100 680 32 5.4 Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VGS= ±20V VDS=-200V, VGS=0 VDS=-160V, VGS=0 VGS=-10V, ID=-4A ID=-5A VDS=-160V VGS=-4.5V VDS=-100V ID=-5A VGS=-10V RG=10 RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Total Gate Charge 2 2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Reverse Recovery Time2 Reverse Recovery Charge Symbol VSD Trr Qrr Min. Typ. 165 1420 Max. -1.3 Unit V ns nC Test Conditions IS=-5A, VGS=0V IS=-5A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GU08P20 Page: 2/4 ISSUED DATE :2006/01/19 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GU08P20 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2006/01/19 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GU08P20 Page: 4/4