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BYV36D

BYV36D

  • 厂商:

    GULFSEMI

  • 封装:

  • 描述:

    BYV36D - SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 800V CURRENT: 1.5A - Gulf Semicon...

  • 数据手册
  • 价格&库存
BYV36D 数据手册
BYV36D SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 800V CURRENT: 1.5A FEATURE Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability SOD-57 MECHANICAL DATA Case: SOD-57 sintered glass case Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Polarity: color band denotes cathode end Mounting position: any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated) SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage Reverse Breakdown Voltage at IR =0. 1mA Maximum Average Forward Rectified Current at Ttp=60°C, lead length=10mm Peak Forward Surge Current at t=10ms half sinewave Maximum Forward Voltage at rated Forward Current and 25°C IF = 1.0A Maximum DC Reverse Current at rated DC blocking voltage Maximum Reverse Recovery Time Non Repetitive Reverse Avalanche Energy at L=120mH Typical Diode Capacitance at f=1MHz,VR=0V Typical Thermal Resistance (Note 2) Tj = 25°C Tj = 150°C (Note 1) VRRM VRMS VDC V(BR)R IF(AV) IFSM VF IR Trr ER Cd Rth(ja) Tstg, Tj BYV36D 800 560 800 900min 1.5 30 1.45 5.0 150 150 10 40 100 -65 to +175 units V V V V A A V µA nS mJ pF K/W ℃ Storage and Operating Junction Temperature Note: 1. Reverse Recovery Condition IF = 0.5A, IR = 1.0A, IRR = 0.25A 2. Device mounted on an epoxy-glass printed-circuit boars, 1.5mm thick; thichness of Cu-layer≥40μm Rev.A1 www.gulfsemi.com RATINGS AND CHARACTERISTIC CURVES BYV36D Rev.A1 www.gulfsemi.com
BYV36D 价格&库存

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