R6925

PHOTOMULTIPLIER TUBE R6925 High Sensitivity Bialkali Photocathode 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES GWide Spectral Response ......................... 185 nm to 730 nm GCathode Sensitivity Luminous ................................................... 70 µA/lm Typ. Radiant at 410 nm ..................................... 68 mA/W Typ. GAnode Sensitivity (at 1000 V) Luminous ................................................... 500 A/lm Typ. Radiant at 410 nm .............................. 4.8 × 105 A/W Typ. APPLICATIONS GFluorescence Spectrophotometers GEmission Spectrophotometers GAtomic Absorption Spectrophotometers SPECIFICATIONS GENERAL Parameter Description/Value 185 to 730 Spectral Response 410 Wavelength of Maximum Response MateriaI Bialkali Photocathode Minimum Effective Area 8 × 24 UV glass Window Material Secondary Emitting Surface Bialkali Structure Circular-cage Dynode Number of Stages 9 4 Direct Interelectrode Anode to Last Dynode 6 Anode to All Other Electrodes Capacitances Base 11-pin base JEDEC No. B11-88 Weight Approx. 45 Operating Ambient Temperature -30 to +50 Storage Temperature -30 to +50 SuitabIe Socket E678–11A (Sold Separately) E717–63 (Sold Separately) SuitabIe Socket Assembly E717–74 (Sold Separately) Unit nm nm — mm — — — — pF pF — g °C °C — — Figure 1: Typical Spectral Response TPMSB0123EB 100 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 10 QUANTUM EFFICIENCY 1 CATHODE RADIANT SENSITIVITY 0.1 0.01 100 200 300 400 500 600 700 800 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBES R6925 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current A Value 1250 250 0.1 Unit V V mA CHARACTERISTlCS (at 25 °C) Parameter Quantum Efficiency (at Peak Wavelength) Luminous B Radiant at 410 nm Red/White Ratio C Blue Sensitivity Index D Luminous E Radiant at 410 nm Min. — 40 — — — 200 — — — — — — — — — Typ. 23 (at 250 nm) 70 68 0.02 7 500 4.8 × 105 7.1 × 106 5 2.2 × 10-16 2.2 22 1.2 0.1 1.0 Max. — — — — — — — — 50 — — — — — — Unit % µA/lm mA/W — — A/lm A/W — nA W ns ns ns % % Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current F (After 30 min Storage in Darkness) ENI (Equivalent Noise Input) G Anode Pulse Rise Time H Time Response E Electron Transit Time I Transit Time Spread (TTS) J Light Hysteresis Anode Current Stability K Voltage Hysteresis NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: Red/White ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. D: The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. E: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1: Voltage Distribution Ratio Electrode Distribution Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. I: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. K: Hysteresis is temporary instability in anode current after light and voltage are applied. ANODE CURRENT li l max. l min. TIME 0 5 6 7 (minutes) TPMSB0002EA Hysteresis = lmax. li lmin. SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode × 100 (%) F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G.∆f S q = Electronic charge (1.60 × 10-19 coulomb). ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. (1) Light Hysteresis The tube is operated at 750 V with an anode current of 1 µA for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2) Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Figure 2: Anode Luminous Sensitivity and Gain Characteristcs 105 TPMSB0124EB Figure 3: Typical Time Response 108 100 80 TPMSB0004EC ANODE LUMINOUS SENSITIVITY (A/Im) 104 TYPICAL GAIN 60 107 40 TRANS 103 106 20 IT TIME 102 TYPICAL ANODE SENSITIVITY 105 TIME (ns) GAIN 10 8 6 101 MINIMUM ANODE SENSITIVITY 104 4 RISE T 100 103 2 IME 10-1 500 700 1000 102 1500 1 500 700 1000 1500 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure 4: Typical ENI with Wavelength TPMSB0125EA Figure 5: Typical EADCI (Equivalent Anode Dark Current Input) vs. Supply Voltage 10-9 TPMSB0126EB 10-13 10-14 10-10 EADCI (lm) ENI (W) 10-15 10-11 10-16 10-12 10-17 100 200 300 400 500 600 700 800 10-13 500 600 800 1000 1500 WAVELENGTH (nm) SUPPLY VOLTAGE (V) PHOTOMULTIPLIER TUBES R6925 Figure 6: Dimensional Outline and Basing Diagram (Unit: mm) 28.5 ± 1.5 T9 BULB 8 MIN. Figure 7: Socket (Unit: mm) E678-11A 49 38 Sold Separately PHOTOCATHODE DY5 24 MIN. DY4 4 80 MAX. DY3 3 94 MAX. DY2 2 1 5 DY6 6 9 DY9 10 P 11 K 29 5 49.0 ± 0.25 DY1 DIRECTION OF LIGHT Bottom View (Basing Diagram) 32.2 ± 0.5 11 PIN BASE JEDEC No.B11-88 TACCA0064EA TPMSA0005EB Figure 8: D Type Socket Assembly (Unit: mm) Sold Separately E717-63 E717-74 HOUSING (INSULATOR) SOCKET PIN No. 10 P R10 DY9 9 R9 DY8 DY7 8 R8 7 R7 2 DY6 DY5 6 R6 5 R5 31.0 ± 0.5 HOUSING (INSULATOR) DY4 DY3 DY2 4 R4 3 R3 2 R2 DY1 K 1 R1 11 -HV AWG22 (VIOLET) R13 4- 2.8 * "Wiring diagram applies when -HV is supplied." To supply +HV,connect the pin "G" to+HV, and the pin "K" to the GND. R1 to R10 : 330 kΩ C1 to C3 : 10 nF 7 C1 C2 26.0±0.2 32.0±0.5 TOP VIEW 14.0±0.5 C3 SOCKET PIN No. 10 P R10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 0.7 DY1 K 9 R9 8 R8 7 R7 6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11 -HV (K) R1 to R10 : 330 kΩ C1 to C3 : 10 nF C1 C2 C3 SIGNAL OUTPUT (A) GND (G) 5 33.0 ± 0.3 3.5 PMT SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) PMT 32.0±0.5 26.0±0.2 38.0 ± 0.3 49.0 ± 0.3 29.0 ± 0.3 4 0.7 30.0 +0 -1 A G 2.7 22.4±0.2 SIDE VIEW K 450 ± 10 POTTING COMPOUND ° 10 30° BOTTOM VIEW TACCA0002EH TACCA0277EA * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMS1034E02 18 4 3.5 8 DY8 33 7 DY7 JUL. 2006. IP