BTB16-800CW3G

Thyristors Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G BTB16-600CW3G, BTB16-800CW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating of 16 Amperes RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 1000 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 8.5 A/ms minimum at 125°C Pin Out • These are Pb−Free Devices Functional Diagram MT2 MT1 G CASE 221A STYLE 4 1 2 Additional Information Datasheet Resources Samples © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) (Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C) Value VDRM, VRRM BTB16−600CW3G 600 V 800 BTB16−800CW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Unit IT (RMS) 16 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC= 25°C) ITSM 170 A Circuit Fusing Consideration (t = 8.3 ms) I 2t 144 A²sec VDSM/ VRSM VDSM/ VRSM +100 V Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 W Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 20 W Average Gate Power (TJ = 125°C) PG(AV) 1.0 W Operating Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10 ms) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Thermal Resistance, Symbol Value Junction−to−Case (AC) R8JC 1.9 Junction−to−Ambient R8JA 60 TL 260 Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Unit °C/W °C © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions) Characteristic Peak Repetitive Blocking Current (VD = VDRM = VRRM; Gate Open) Symbol Min Typ Max Unit TJ = 25°C IDRM, - - 0.005 TJ = 110°C IRRM - - 2.0 mA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit VTM − − 1.55 V 2.0 − 35 2.0 − 35 2.0 − 35 − − 50 − − 60 − − 65 MT2(−), G(−) − − 60 MT2(+), G(+) 0.5 − 1.7 0.5 − 1.1 MT2(−), G(−) 0.5 − 1.1 MT2(+), G(+) 0.2 − − 0.2 − − 0.2 − − Forward On-State Voltage (Note 2) (ITM = ±17 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 33 Ω) MT2(+), G(+) MT2(+), G(−) IGT MT2(−), G(−) Holding Current (VD = 12 V, Gate Open, Initiating Current = ±500 mA) IH MT2(+), G(+) Latching Current (VD = 12 V, IG = = 1.2 x IGT) Gate Trigger Voltage (VD = 12 V, RL = 33 Ω) Gate Non−Trigger Voltage (TJ = 125°C) MT2(+), G(−) MT2(+), G(−) MT2(+), G(−) MT2(−), G(−) IL VGT VGD 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 mA mA mA V V Thyristors Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G Dynamic Characteristics Characteristic Symbol Min Typ Max Unit (dI/dt)c 8.5 − − A/ms Critical Rate of Rise of On−State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − − 50 A/µs Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 1000 − − V/µs Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) Voltage Current Characteristic of SCR Symbol Parameter +C urrent VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH VTM on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 Quadrant 1 MainTerminal 2 + IH off state +V oltage IDRM at VDRM VTM Holding Current Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II Quadrant I (+) IGT GATE ( ) IGT GATE MT1 MT1 REF REF ( ) MT2 ( ) MT2 IGT Quadrant III +I GT Quadrant IV (+) IGT GATE ( ) IGT GATE MT1 MT1 REF REF MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G Figure 1. Typical RMS Current Derating Figure 2. On-State Power Dissipation 125 TC , CASE TEMPERATURE (C ° ) 120 30° 60° 90° 115 110 105 100 120° 95 180° 90 DC 85 80 75 70 IT(RMS) Figure 4. Thermal Response r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. On−State Characteristics 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 Figure 5. Typical Hold Current Variation © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 4 Thyristors Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G Figure 7. Typical Gate Trigger Voltage Variation Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential Waveform) Figure 9. Critical Rate of Rise of CommutatingVoltage µ Figure 6. Typical Gate Trigger Current Variation 100 (dv/dt)c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE(V/sµ ) 5000 VD = 800 Vpk TJ = 125°C 4K 3K 2K 1K 0 10 100 1000 100°C 75°C ITM tw VDRM 1 10000 TJ = 125°C 10 R G, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 10 f= 1 2 tw (di/dt)c = 6f ITM 1000 20 30 40 50 60 70 80 90 100 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC MEASURE I TRIGGER CHARGE CONTROL CL TRIGGER CONTROL CHARGE 1N4007 + 200 V MT2 1N914 51 G MT1 Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G Dimensions Part Marking System 4 SEATING PLANE B F 4 Q 12 C T S BTB16 xCWG AYWW A U 3 H 1 K Z R L V J G D N 2 3 x= A= Y= WW G= TO 220AB CASE 221A−07 ISSUE AA 6 or 8 Assembly Location Year = Work Week Pb Free Package Pin Assignment Dim Inches Millimeters 1 Main Terminal 1 2 Main Terminal 2 Min Max Min Max A 0.570 0.620 14.48 15.75 3 Gate B 0.380 0.405 9.66 10.28 4 Main Terminal 2 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 Ordering Information Device Package Shipping BTB16−600CW3G TO-220AB (Pb-Free) 50 Units / Rail BTB16−800CW3G TO-220AB (Pb-Free) 50 Units / Rail 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17