IXTP1R6N50D2

IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET N-Channel VDSX ID(on) RDS(on) = >  500V 1.6A 2.3  D TO-252 (IXTY) G G S D (Tab) S TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 100 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 500 VGS(off) VDS = 25V, ID = 100A - 2.5 IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 0.8A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 S V 100 nA 2 A 25 A TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved 2.3 1.6 TO-220 (IXTP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification V - 4.5 D (Tab)  A Advantages • Easy to Mount • Space Savings • High Power Density Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100179E(7/18) IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.00 VDS = 30V, ID = 0.8A, Note 1 Ciss Coss tr td(off) tf pF 65 pF 16.5 pF 25 ns 70 ns 35 ns 41 ns 23.7 nC 2.2 nC 13.8 nC 0.50 1.25 C/W C/W VGS = 5V, VDS = 250V, ID = 0.8A RG = 5 (External) VGS = 5V, VDS = 250V, ID = 0.8A Qgd RthJC RthCS 645 Resistive Switching Times Qg(on) Qgs S VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) 1.75 TO-220 Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 400V, ID = 0.15A, TC = 75C, Tp = 5s 60 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 1.6A, VGS = -10V, Note 1 trr IRM QRM IF = 1.6A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 400 9.16 1.83 1.3 V ns A μC Note 1. Pulse test, t  300μs, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 1.6 10 VGS = 5V 3V 2V 1V 1.4 8 0V 1.0 0.8 2V 7 I D - Amperes I D - Amperes 1.2 VGS = 5V 3V 9 -1V 0.6 6 1V 5 4 0V 3 0.4 2 - 2V 0.2 -1V 1 0.0 - 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 VDS - Volts 25 30 o o Fig. 4. Drain Current @ TJ = 25 C Fig. 3. Output Characteristics @ TJ = 125 C 1.6 1E+00 VGS = - 2.25V VGS = 5V 2V 1V 1.4 - 2.50V 1E-01 - 2.75V 0V 1.2 - 3.00V 1E-02 -1V 1.0 I D - Amperes I D - Amperes 20 VDS - Volts 0.8 0.6 - 3.25V 1E-03 - 3.50V 1E-04 - 3.75V 1E-05 - 4.00V - 2V 0.4 0.2 - 3V 0.0 1E-06 0 1 2 3 4 5 6 0 100 200 VDS - Volts 300 400 500 600 VDS - Volts o Fig. 5. Drain Current @ TJ = 100 C 1.E+08 1.E+00 Fig. 6. Dynamic Resistance vs. Gate Voltage VGS = - 2.50V ∆ VDS = 350V - 100V 1.E+07 - 2.75V 1.E-01 RO - Ohms I D - Amperes - 3.00V - 3.25V 1.E-02 - 3.50V 1.E+06 o TJ = 25 C 1.E+05 o TJ = 100 C - 3.75V 1.E-03 1.E+04 - 4.00V 1.E-04 1.E+03 0 100 200 300 400 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 500 600 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 VGS - Volts -2.8 -2.6 -2.4 -2.2 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Fig. 8. RDS(on) Normalized to ID = 0.8A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 3.5 VGS = 0V I D = 0.8A VGS = 0V 5V 3.0 RDS(on) - Normalized RDS(on) - Normalized 2.2 1.8 1.4 1.0 2.5 o TJ = 125 C 2.0 1.5 o TJ = 25 C 0.6 1.0 0.2 0.5 -50 -25 0 25 50 75 100 125 150 0 1 2 TJ - Degrees Centigrade 3 4 5 6 5 6 I D - Amperes Fig. 10. Transconductance Fig. 9. Input Admittance 6 3.5 VDS = 30V VDS = 30V 3.0 5 2.5 g f s - Siemens I D - Amperes 4 3 o TJ = 125 C o 25 C o - 40 C 2 o TJ = - 40 C 2.0 o 25 C o 125 C 1.5 1.0 1 0.5 0 0.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 1 2 VGS - Volts 3 4 I D - Amperes Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode 1.3 5 VGS = -10V 4 VGS(off) @ VDS = 25V I S - Amperes BV / VGS(off) - Normalized 1.2 1.1 BVDSX @ VGS = - 5V 1.0 3 o 2 TJ = 125 C o TJ = 25 C 0.9 1 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Fig. 13. Capacitance Fig. 14. Gate Charge 10,000 5 VDS = 250V 4 I D = 0.8A 3 100 I G = 10mA 2 Ciss 1,000 VGS - Volts Capacitance - PicoFarads f = 1 MHz Coss 1 0 -1 -2 -3 Crss -4 -5 10 0 5 10 15 20 25 30 35 0 40 5 10 15 20 25 VDS - Volts QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area o @ TC = 25 C 10.0 @ TC = 75oC 10.0 RDS(on) Limit RDS(on) Limit 25μs 100μs I D - Amperes I D - Amperes 100μs 1ms 1.0 1.0 1ms 10ms o TJ = 150 C TC = 25 C Single Pulse 0.1 10.00 o TJ = 150 C 100ms o 10ms o TC = 75 C Single Pulse DC DC Fig. 17. Maximum Transient Thermal Impedance 100ms 0.1 10 100 10 1,000 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Resistance 2.00 Z (th)JC - K / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1R6N50D2 (2C-C15) 8-14-09 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 TO-252 Outline TO-263 Outline TO-220 Outline A E L1 L2 2 A1 3 A oP D1 D 1 E E1 C2 A1 H1 Q 4 H D2 D D1 b b2 L3 e c 0.43 [11.0] E1 e A2 EJECTOR 0 PIN L1 L 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: IXTA1R6N50D2 IXTP1R6N50D2 IXTY1R6N50D2