SiC MOSFET
SiC MOSFET Diode
LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L
LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET
RoHS
Product Summary
Characteristics
Circuit Diagram TO-247-3L
Value
Unit
VDS
1700
V
Typical RDS(ON)
750
mΩ
ID ( TC ≤ 100 °C)
3.5
A
Features
• O
ptimized for highfrequency, high-efficiency
applications
• N
ormally-off operation at
all temperatures
• Ultra-low on-resistance
• E
xtremely low gate
charge and output
capacitance
*
* Body
diode
1
2
• L
ow gate resistance for
high-frequency switching
3
Environmental
• L
ittelfuse “RoHS” logo =
RoHS conform
Applications
RoHS
• L
ittelfuse “HF” logo =
Halogen Free
• Littelfuse “Pb-free” logo = Pb
Pb-free lead plating
• H
igh-frequency
applications
• Solar Inverters
• S
witch Mode Power
Supplies
• Motor Drives
• H
igh Voltage DC/DC
Converters
• Battery Chargers
• Induction Heating
• UPS
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Rev 0.3, Revised: 07/16/18
Pb
SiC MOSFET
SiC MOSFET Diode
LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L
Maximum Ratings
Characteristics
Conditions
Value
VGS = 20 V, TC = 25 °C
5.0
VGS = 20 V, TC = 100 °C
3.5
ID(pulse)
TC = 25 °C
15
PD
TC = 25 °C, TJ = 150 °C
Symbol
Continuous Drain Current
ID
Pulsed Drain Current 1
Power Dissipation
Operating Junction Temperature
TJ
Gate-source Voltage
Unit
A
A
54
W
-55 to 150
°C
VGS,MAX
Absolute maximum values
-6 to 22
VGS,OP,TR
Transient,
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