HMF8M8F4VS

HANBit HMF8M8F4VS FLASH-ROM MODULE 8MByte (8M x 8-Bit) , SMM 80Pin Part No. HMF8M8F4VS GENERAL DESCRIPTION The HMF8M8F4VS is a high-speed flash read only memory (FROM) module containing 8,388,608 bytes organized in an x8bit configuration. The module consists of four 2M x 8 FROM mounted on a 80-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTLcompatible. PIN ASSIGNMENT FEATURES w Part identification HMF8M8F4VS(Bottom boot block configuration) w Access time: 90, 100, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3V to 3.6V power supply w 80-Pin Designed 40-Pin, 0.8mm Fine Pitch Connector P1,P2 w Minimum 100,000 write cycle guarantee per sector w 10-year data retention at 85 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume PIN 1 2 3 4 5 6 7 8 9 10 11 OPTIONS w Timing 90ns access 100ns access 120ns access w Packages SMM 80-pin F - 90 -100 -120 MARKING 12 13 14 15 16 17 18 19 20 A9 A10 Vss A11 A12 A13 A14 A15 Vcc 32 33 34 35 36 37 38 39 40 DQ3 NC Vss DQ2 NC DQ1 NC DQ0 Vcc 12 13 14 15 16 17 18 19 20 NC NC Vss NC NC NC NC NC Vcc 32 33 34 35 36 37 38 39 40 A7 A6 Vss A5 A4 A3 A2 A1 Vcc Symbol Vcc A20 NC NC NC /RY_BY Vss /RESET /WE A19 A8 P1 PIN 21 22 23 24 25 26 27 28 29 30 31 Symbol Vcc NC DQ7 NC DQ6 NC Vss DQ5 NC DQ4 NC PIN 1 2 3 4 5 6 7 8 9 10 11 Symbol Vcc /CE1 /CE2 /CE3 NC(/CE4) NC(/CE5) Vss NC(/CE6) NC(/CE7) NC NC P2 PIN 21 22 23 24 25 26 27 28 29 30 31 Symbol Vcc NC NC NC /OE /CE0 Vss A16 A0 A18 A17 URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM A(0 : 20) DQ(0 :7) A(0:20) DQ(0:7) /CE0 /CE /OE /WE /Reset /RY-BY HMF8M8F4VS U4 A(0:20) DQ(0:7) /CE1 /CE /OE /WE /Reset /RY-BY U3 A(0:20) DQ(0:7) /CE2 /CE /OE /WE /Reset /RY-BY U2 A(0:20) DQ(0:7) /CE3 /OE /WE /RESET /RY_BY /CE /OE /WE /Reset /RY-BY U1 PIN DESCRIPTION PIN A0 – A20 DQ0 – DQ31 /CE0-/CE3 /OE /WE /RESET FUNCTION Address Inputs Data Input/Output Chip Enable Output Enable Read/Write Enable Hardware Reset Pin PIN /BYTE Vcc Vss /RY_BY NC FUNCTION Word / Byte selection Power (+3V) Ground Ready/Busy output No Connection URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY RESET SECTOR PROTECT SECTOR UNPROTECT READ W RITE /CS Vcc±0.3V X L L L L /OE X X H H L H /WE X X L L H L RESET Vcc±0.3V L VID VID H H HMF8M8F4VS DQ HIGH-Z HIGH-Z DIN, DOUT DIN, DOUT DOUT DOUT Note : X means don't care, WE0* Low byte (D0~7) Write enable, WE1* High byte(D8~15) Write enable. ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Output Short Circuit Current Storage Temperature Operating Temperature RATING -0.5V to Vcc +0.5V -0.5V to +4.0V 1,600mA -65oC to +150oC -0oC to +70oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS PARAMETER Vcc for regulated Supply Voltage Vcc for full voltage RANGE +2.0V to 3.6V +2.7V to 3.6V DC AND OPERATING CHARACTERISTICS PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current Vcc Active Write Current Vcc Standby Current Vcc Reset Current TEST CONDITIONS VIN= VSS to VCC , VCC= VCC max VOUT= VSS to VCC, VCC= VCC max IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc = Vcc min /CE = VIL, ,/OE=VIL, f=5MHz /CE = VIL, /OE=VIH /CE, RESET=VCC±0.3V /RESET=Vss±0.3V, SYMBOL IL1 IL0 VOH VOL ICC1 ICC2 ICC3 ICC4 MIN -4.0 -4.0 0.85xVcc 0.4 64 180 20 20 MAX +4.0 +4.0 UNITS µA µA V V mA mA µA µA URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit Low Vcc Lock-Out Voltage VLKO 1.5 HMF8M8F4VS V ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Block Erase Time TYP. 0.7 MAX. Excludes 00H programming 15 Sec prior to erasure Byte Programming Time 9 270 µS Excludes system-level overhead Excludes system-level Chip Programming Time 18 54 sec overhead UNIT COMMENTS CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance VIN = 0 VOUT = 0 VIN = 0 10 10 10 pF pF pF MIN. MAX UNIT Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER CL=100pF SYMBOLS DESCRIPTION -90 JEDEC tAVAV tELQV tGLQV tEHQZ tAXQX STANDARD Min tRC tCE tOE tDF tQH /CE or /OE, Whichever Occurs First Read Cycle Time Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Hold Time From Addresses, 0 0 0 ns 90 90 35 30 Max Min 100 100 40 30 Max Min 120 120 50 30 Max ns ns ns ns -100 -120 UNIT URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit TEST CONDITIONS TEST CONDITION Output load Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 5 0.0 - 3.0 1.5 1.5 VALUE 1TTL gate HMF8M8F4VS UNIT ns V V V 3.3V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD Min tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tGHWL tCS tCH tWP tWPH W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High 90 0 45 45 0 0 0 0 0 45 30 Max Min 100 0 45 45 0 0 0 0 0 45 30 Max Min 120 0 50 50 0 0 0 0 0 50 30 Max ns ns ns ns ns ns ns ns ns ns ns -90 CL=100pF -100 -120 UNIT URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit tWHWH1 tWHWH2 tWHWH1 tBERS tVCS tRB tBUSY Byte Programming Operation Block Erase Operation Vcc Setup Time Recovery time from RY/BY Program/Erase Valid to RY/BY Delay 9 0.7 50 0 90 9 0.7 50 0 90 HMF8M8F4VS 9 0.7 50 0 90 µs sec µs ns ns u Alternate /CE Controlled Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tGHEL tWS tWH tCP tCPH tBUSY tRB W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /OE High to /WE Low /WE Hold Time /CE Pulse Width /CE Pulse Width High Program/Erase Valid RY//BY Delay Recovery Time from RY//BY Min 90 0 45 45 0 0 0 0 0 45 30 90 0 -90 Max Min 100 0 45 45 0 0 0 0 0 45 30 90 0 CL=100pF -100 Max -120 Min 120 0 50 50 0 0 0 0 0 50 30 90 0 Max ns ns ns ns ns ns ns ns ns ns ns ns ns UNIT URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit TIMING DIAGRAMS HMF8M8F4VS Notes : 1. DQ7 is the output of the complement of the data written to the device. 2. DOUT is the output of the data written to the device. 3. PA : Program Address, PD : Program Data URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit 4. The illustration shows the last two cycles of the program command sequence. HMF8M8F4VS Notes : 1. DQ7 is the output of the complement of the data written to the device. 2. DOUT is the output of the data written to the device. 3. PA : Program Address, PD : Program Data 4. The illustration shows the last two cycles of the program command sequence. URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS UNIT: mm Front-Side HMF8M8F4VS Rear-Side URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit ORDERING INFORMATION Component Number 4EA 4EA 4EA HMF8M8F4VS Part Number Density Org. Package Vcc SPEED HMF8M8F4VS-90 HMF8M8F4VS-100 HMF8M8F4VS-120 8MByte 8MByte 8MByte 8M x 8 8M x 8 8M x 8 80Pin -SMM 80Pin -SMM 80Pin -SMM 3.3V 3.3V 3.3V 90ns 100ns 120ns URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd.